{"title":"高kt2×Q,多频率铌酸锂谐振器","authors":"Renyuan Wang, S. Bhave, K. Bhattacharjee","doi":"10.1109/MEMSYS.2013.6474203","DOIUrl":null,"url":null,"abstract":"This paper presents design and vacuum measurements of lithium niobate (LN) contour-mode resonators (CMR). By carefully positioning the interdigital transducer (IDT), we achieved CMRs with k<sub>t</sub><sup>2</sup>×Q of 7%*2150=148 (IDT @ node) or resonators with very high k<sub>t</sub><sup>2</sup> of 12.3% and spur-attenuated response (IDT @ anti-node). In addition, we demonstrated resonators with frequencies ranging from 400MHz to 800MHz on a single chip.","PeriodicalId":92162,"journal":{"name":"2013 IEEE 26th International Conference on Micro Electro Mechanical Systems (MEMS 2013) : Taipei, Taiwan, 20-24 January 2013. IEEE International Conference on Micro Electro Mechanical Systems (26th : 2013 : Taipei, Taiwan)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2013-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"41","resultStr":"{\"title\":\"High kt2×Q, multi-frequency lithium niobate resonators\",\"authors\":\"Renyuan Wang, S. Bhave, K. Bhattacharjee\",\"doi\":\"10.1109/MEMSYS.2013.6474203\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents design and vacuum measurements of lithium niobate (LN) contour-mode resonators (CMR). By carefully positioning the interdigital transducer (IDT), we achieved CMRs with k<sub>t</sub><sup>2</sup>×Q of 7%*2150=148 (IDT @ node) or resonators with very high k<sub>t</sub><sup>2</sup> of 12.3% and spur-attenuated response (IDT @ anti-node). In addition, we demonstrated resonators with frequencies ranging from 400MHz to 800MHz on a single chip.\",\"PeriodicalId\":92162,\"journal\":{\"name\":\"2013 IEEE 26th International Conference on Micro Electro Mechanical Systems (MEMS 2013) : Taipei, Taiwan, 20-24 January 2013. IEEE International Conference on Micro Electro Mechanical Systems (26th : 2013 : Taipei, Taiwan)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-03-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"41\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE 26th International Conference on Micro Electro Mechanical Systems (MEMS 2013) : Taipei, Taiwan, 20-24 January 2013. IEEE International Conference on Micro Electro Mechanical Systems (26th : 2013 : Taipei, Taiwan)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MEMSYS.2013.6474203\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE 26th International Conference on Micro Electro Mechanical Systems (MEMS 2013) : Taipei, Taiwan, 20-24 January 2013. IEEE International Conference on Micro Electro Mechanical Systems (26th : 2013 : Taipei, Taiwan)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MEMSYS.2013.6474203","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 41

摘要

本文介绍了铌酸锂(LN)轮廓模谐振器(CMR)的设计和真空测量。通过仔细定位数字间换能器(IDT),我们实现了kt2×Q为7%*2150=148 (IDT @节点)的cmr或具有12.3%的极高kt2和脉冲衰减响应(IDT @反节点)的谐振器。此外,我们还在单个芯片上演示了频率范围从400MHz到800MHz的谐振器。
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High kt2×Q, multi-frequency lithium niobate resonators
This paper presents design and vacuum measurements of lithium niobate (LN) contour-mode resonators (CMR). By carefully positioning the interdigital transducer (IDT), we achieved CMRs with kt2×Q of 7%*2150=148 (IDT @ node) or resonators with very high kt2 of 12.3% and spur-attenuated response (IDT @ anti-node). In addition, we demonstrated resonators with frequencies ranging from 400MHz to 800MHz on a single chip.
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