{"title":"半导体中的电流振荡","authors":"L. Stenflo","doi":"10.1088/0508-3443/18/12/129","DOIUrl":null,"url":null,"abstract":"It is known that current oscillations can occur in semiconductors in constant electric fields if the collision cross sections for carrier scattering are strongly energy dependent. The growth rate of these oscillations is calculated and a new criterion for their existence is developed.","PeriodicalId":9350,"journal":{"name":"British Journal of Applied Physics","volume":"68 1","pages":"1835-1836"},"PeriodicalIF":0.0000,"publicationDate":"1967-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Current oscillations in semiconductors\",\"authors\":\"L. Stenflo\",\"doi\":\"10.1088/0508-3443/18/12/129\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"It is known that current oscillations can occur in semiconductors in constant electric fields if the collision cross sections for carrier scattering are strongly energy dependent. The growth rate of these oscillations is calculated and a new criterion for their existence is developed.\",\"PeriodicalId\":9350,\"journal\":{\"name\":\"British Journal of Applied Physics\",\"volume\":\"68 1\",\"pages\":\"1835-1836\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1967-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"British Journal of Applied Physics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1088/0508-3443/18/12/129\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"British Journal of Applied Physics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1088/0508-3443/18/12/129","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
It is known that current oscillations can occur in semiconductors in constant electric fields if the collision cross sections for carrier scattering are strongly energy dependent. The growth rate of these oscillations is calculated and a new criterion for their existence is developed.
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