M. di Forte-Poisson, C. Brylinski, J. Favre, J. Portal, D. Lavielle
{"title":"低压化学气相沉积法生长Si δ掺杂InP的表征","authors":"M. di Forte-Poisson, C. Brylinski, J. Favre, J. Portal, D. Lavielle","doi":"10.1109/ICIPRM.1991.147298","DOIUrl":null,"url":null,"abstract":"Experimental results obtained from secondary ion mass spectroscopy (SIMS) and low temperature Hall and Shubnikov de Haas measurements (SdH) of in situ planar doped low pressure metalorganic chemical vapor deposition (LP-MOCVD) grown InP epilayers with various Si doses (from 3*10/sup 11/ cm/sup -2/ to 7*10/sup 13/ cm/sup -2/) are presented. Transport measurements give evidence of quantum confinement of the electronic gas in the layers. The electronic density of the delta -doped layers is shown to saturate at n/sub s/=6*10/sup 12/ cm/sup -2/, depending on silicon doses. A comparison of design parameters (silicon doses) with both measured and calculated electronic subband properties is made for each epilayer. The transport properties of lightly Si delta -doped InP layers, under optical excitation at 4.2 K, are described.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"145 1","pages":"80-84"},"PeriodicalIF":0.0000,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Characterization of Si- delta doped InP grown by low pressure chemical vapor deposition\",\"authors\":\"M. di Forte-Poisson, C. Brylinski, J. Favre, J. Portal, D. Lavielle\",\"doi\":\"10.1109/ICIPRM.1991.147298\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Experimental results obtained from secondary ion mass spectroscopy (SIMS) and low temperature Hall and Shubnikov de Haas measurements (SdH) of in situ planar doped low pressure metalorganic chemical vapor deposition (LP-MOCVD) grown InP epilayers with various Si doses (from 3*10/sup 11/ cm/sup -2/ to 7*10/sup 13/ cm/sup -2/) are presented. Transport measurements give evidence of quantum confinement of the electronic gas in the layers. The electronic density of the delta -doped layers is shown to saturate at n/sub s/=6*10/sup 12/ cm/sup -2/, depending on silicon doses. A comparison of design parameters (silicon doses) with both measured and calculated electronic subband properties is made for each epilayer. The transport properties of lightly Si delta -doped InP layers, under optical excitation at 4.2 K, are described.<<ETX>>\",\"PeriodicalId\":6444,\"journal\":{\"name\":\"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials\",\"volume\":\"145 1\",\"pages\":\"80-84\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1991-04-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1991.147298\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1991.147298","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Characterization of Si- delta doped InP grown by low pressure chemical vapor deposition
Experimental results obtained from secondary ion mass spectroscopy (SIMS) and low temperature Hall and Shubnikov de Haas measurements (SdH) of in situ planar doped low pressure metalorganic chemical vapor deposition (LP-MOCVD) grown InP epilayers with various Si doses (from 3*10/sup 11/ cm/sup -2/ to 7*10/sup 13/ cm/sup -2/) are presented. Transport measurements give evidence of quantum confinement of the electronic gas in the layers. The electronic density of the delta -doped layers is shown to saturate at n/sub s/=6*10/sup 12/ cm/sup -2/, depending on silicon doses. A comparison of design parameters (silicon doses) with both measured and calculated electronic subband properties is made for each epilayer. The transport properties of lightly Si delta -doped InP layers, under optical excitation at 4.2 K, are described.<>
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