{"title":"一个非常宽的光谱超发光二极管在1.3 μ m","authors":"O. Mikami, Y. Noguchi, H. Yasaka","doi":"10.1109/ICIPRM.1991.147339","DOIUrl":null,"url":null,"abstract":"An approach that broadens the emission spectral width of superluminescent diodes (SLDs) is proposed. The fabrication of 1.3- mu m InGaAsP/InP SLDs incorporating a structure of tandem active layers is described. For this device, the spectral width is broadened over 100 nm, achieving a short coherence length of 9.2 mu m, one-fourth that of conventional 1.3- mu m SLDs.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"1 1","pages":"212-215"},"PeriodicalIF":0.0000,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A very wide spectrum superluminescent diode at 1.3 mu m\",\"authors\":\"O. Mikami, Y. Noguchi, H. Yasaka\",\"doi\":\"10.1109/ICIPRM.1991.147339\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An approach that broadens the emission spectral width of superluminescent diodes (SLDs) is proposed. The fabrication of 1.3- mu m InGaAsP/InP SLDs incorporating a structure of tandem active layers is described. For this device, the spectral width is broadened over 100 nm, achieving a short coherence length of 9.2 mu m, one-fourth that of conventional 1.3- mu m SLDs.<<ETX>>\",\"PeriodicalId\":6444,\"journal\":{\"name\":\"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials\",\"volume\":\"1 1\",\"pages\":\"212-215\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1991-04-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1991.147339\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1991.147339","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
摘要
提出了一种提高超发光二极管(SLDs)发射光谱宽度的方法。介绍了采用串联有源层结构的1.3 μ m InGaAsP/InP sld的制备方法。对于该器件，光谱宽度加宽超过100 nm，实现了9.2 μ m的短相干长度，是传统1.3 μ m sld的四分之一。
A very wide spectrum superluminescent diode at 1.3 mu m
An approach that broadens the emission spectral width of superluminescent diodes (SLDs) is proposed. The fabrication of 1.3- mu m InGaAsP/InP SLDs incorporating a structure of tandem active layers is described. For this device, the spectral width is broadened over 100 nm, achieving a short coherence length of 9.2 mu m, one-fourth that of conventional 1.3- mu m SLDs.<>
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