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引用次数: 3
摘要
本文首次在AlGaN/ GaN hemt中，将缓冲相关电荷分接效应建模为阈值电压偏移。阈值电压的位移由一个阈值电压模型来描述，该模型不包含任何拟合参数，并且是连续可微的。阈值电压模型可以很容易地实现为一个紧凑的大信号模型。具有捕获效应的大信号模型可以准确地预测动态I-V行为、高达14 GHz的s参数和大信号输出特性。
Modeling Buffer-Related Charge Trapping Effect by Using Threshold Voltage Shifts in AlGaN/GaN HEMTs
In this paper, buffer-related charge tapping effect is modeled as threshold voltage shifts for the first time in AlGaN/ GaN HEMTs. The threshold voltage shifts are described by a threshold voltage model, which does not contain any fitting parameters and is also continuously differentiable. The threshold voltage model can be easily implemented into a compact large-signal model. The large-signal model with trapping effects can accurately predict the dynamic I-V behavior, S-parameters up to 14 GHz, and large-signal output characteristics.
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