气相合成氮化硅纳米结构的分析电镜研究

IF 3.9 Q2 NANOSCIENCE & NANOTECHNOLOGY Journal of Nanotechnology Pub Date : 2019-09-11 DOI:10.32829/nanoj.v3i1.87
Mariella Cortez Caillahua, F. J. Moura, G. Solórzano
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引用次数: 0

摘要

氮化硅(Si3N4)是一种共价化合物,具有优异的物理和化学性能,如耐腐蚀、低比重量和良好的室温和高温导热性。这些特性在高级陶瓷和半导体器件等方面的应用非常有吸引力[1]。以SiCl4和NH3气相反应,以Ar为载气,在300℃的温度下沉淀,合成了纳米非晶态氮化硅粉体。除了氮化硅粉末外,还会形成固体卤化铵。
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Analytical Electron Microscopy of Silicon Nitride Nanostructures Synthesized from the Vapor Phase
Silicon nitride, Si3N4 is a covalent compound with excellent physical and chemical properties such as corrosion resistance, low-specific weight and good thermal conductivity at ambient and elevated temperatures. Such properties are very attractive in application as advanced ceramics and in semiconductor devise [1]. Nano sized amorphous silicon nitride powders were synthesized at 300 °C by precipitation from the vapor phase reaction of SiCl4 and NH3 and Ar as carrier gas. Solid ammonium halogenide is formed as by-product, in addition to silicon nitride powder.
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来源期刊
Journal of Nanotechnology
Journal of Nanotechnology NANOSCIENCE & NANOTECHNOLOGY-
CiteScore
5.50
自引率
2.40%
发文量
25
审稿时长
13 weeks
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