{"title":"18nm SG隧道场效应晶体管的电位和电场模型","authors":"T. S. Arun Samuel, N. Balamurugan","doi":"10.1109/ICEVENT.2013.6496580","DOIUrl":null,"url":null,"abstract":"In this paper, a new two dimensional (2D) analytical model of the single gate (SG) silicon-on-insulator (SOI) tunnel field effect transistors (TFETs) is presented. The parabolic approximation technique is used to solve the 2-D Poisson equation with suitable boundary conditions. Analytical expressions for surface potential and electric field are derived. The validity of the proposed model is tested for device scaled to 18-nm length and the analytical results are compared with TCAD simulations.","PeriodicalId":6426,"journal":{"name":"2013 International Conference on Emerging Trends in VLSI, Embedded System, Nano Electronics and Telecommunication System (ICEVENT)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2013-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Potential and electric field model for 18 nm SG tunnel field effect transistor\",\"authors\":\"T. S. Arun Samuel, N. Balamurugan\",\"doi\":\"10.1109/ICEVENT.2013.6496580\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, a new two dimensional (2D) analytical model of the single gate (SG) silicon-on-insulator (SOI) tunnel field effect transistors (TFETs) is presented. The parabolic approximation technique is used to solve the 2-D Poisson equation with suitable boundary conditions. Analytical expressions for surface potential and electric field are derived. The validity of the proposed model is tested for device scaled to 18-nm length and the analytical results are compared with TCAD simulations.\",\"PeriodicalId\":6426,\"journal\":{\"name\":\"2013 International Conference on Emerging Trends in VLSI, Embedded System, Nano Electronics and Telecommunication System (ICEVENT)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-04-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 International Conference on Emerging Trends in VLSI, Embedded System, Nano Electronics and Telecommunication System (ICEVENT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICEVENT.2013.6496580\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 International Conference on Emerging Trends in VLSI, Embedded System, Nano Electronics and Telecommunication System (ICEVENT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICEVENT.2013.6496580","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Potential and electric field model for 18 nm SG tunnel field effect transistor
In this paper, a new two dimensional (2D) analytical model of the single gate (SG) silicon-on-insulator (SOI) tunnel field effect transistors (TFETs) is presented. The parabolic approximation technique is used to solve the 2-D Poisson equation with suitable boundary conditions. Analytical expressions for surface potential and electric field are derived. The validity of the proposed model is tested for device scaled to 18-nm length and the analytical results are compared with TCAD simulations.
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