基于外延Bi2Sr2Can-1CunO2(n+2)薄膜的Josephson结和超导场效应晶体管

U. Frey, M. Basset, K. Üstüner, M. Blumers, Ch. Schwan, J.C. Martinez, H. Adrian
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引用次数: 2

摘要

基于Bi2Sr2Ca2Cu3O10+δ化合物薄膜的Josephson结显示IcRn产物与YBa2Cu3O7−δ样品相容。利用准粒子隧穿实验,我们发现了超导体-绝缘体-超导体隧穿过程通过势垒局域态的证据。研究了Bi2Sr2CaCu2O8+δ化合物在超导场效应器件中的应用前景。我们提出了四个单位电池厚度的薄膜,在58k时具有超导性。制备了一种倒置金属-绝缘体-超导体结构。根据正常状态电阻的调制,我们估计超导样品的载流子密度为7×1019 cm−3。转变温度的变化为1 K/V。证明了I-V特性的调制。
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Josephson junctions and superconducting field effect transistors based on epitaxial Bi2Sr2Can-1CunO2(n+2) thin films

Josephson junctions based on thin films of the Bi2Sr2Ca2Cu3O10+δ compound show IcRn products compatible with YBa2Cu3O7−δ samples. Using quasiparticle tunneling experiments we found evidence for a superconductor–insulator–superconductor tunneling process via localized states in the barrier. The Bi2Sr2CaCu2O8+δ compound is investigated regarding possible applications in superconducting field effect devices. We present thin films of four unit cells thickness that are superconducting at 58 K. An inverted metal–insulator–superconductor structure was prepared. From the modulation of the normal state resistance we estimate a carrier density of 7×1019 cm−3 for a superconducting sample. The shift of the transition temperature was 1 K/V. The modulation of the IV characteristics was demonstrated.

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