F. P. Luce, S. Reboh, E. Vilain, F. Madeira, J. Barnes, N. Rochat, T. Salvetat, A. Tauzin, F. Milési, F. Mazen, C. Deguet
{"title":"注入温度对可使氢相关缺陷的形成","authors":"F. P. Luce, S. Reboh, E. Vilain, F. Madeira, J. Barnes, N. Rochat, T. Salvetat, A. Tauzin, F. Milési, F. Mazen, C. Deguet","doi":"10.1109/IIT.2014.6939972","DOIUrl":null,"url":null,"abstract":"The evolution of hydrogen-related defects introduced in the InP lattice due to the implantation and subsequent annealing is investigated as a function of the implantation temperature, that was varied from -15 °C to 230 °C. Implanted and annealed samples were analyzed by optical microscopy, SIMS and FTIR. The obtained results are discussed in terms of the formation of VInHx complexes that seems to be efficient H trapping centers, probably being the precursors of the fracture process in InP.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"99 1","pages":"1-4"},"PeriodicalIF":0.0000,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Influence of implantation temperature on the formation of hydrogen-related defects in InP\",\"authors\":\"F. P. Luce, S. Reboh, E. Vilain, F. Madeira, J. Barnes, N. Rochat, T. Salvetat, A. Tauzin, F. Milési, F. Mazen, C. Deguet\",\"doi\":\"10.1109/IIT.2014.6939972\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The evolution of hydrogen-related defects introduced in the InP lattice due to the implantation and subsequent annealing is investigated as a function of the implantation temperature, that was varied from -15 °C to 230 °C. Implanted and annealed samples were analyzed by optical microscopy, SIMS and FTIR. The obtained results are discussed in terms of the formation of VInHx complexes that seems to be efficient H trapping centers, probably being the precursors of the fracture process in InP.\",\"PeriodicalId\":6548,\"journal\":{\"name\":\"2014 20th International Conference on Ion Implantation Technology (IIT)\",\"volume\":\"99 1\",\"pages\":\"1-4\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-10-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 20th International Conference on Ion Implantation Technology (IIT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IIT.2014.6939972\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 20th International Conference on Ion Implantation Technology (IIT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IIT.2014.6939972","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Influence of implantation temperature on the formation of hydrogen-related defects in InP
The evolution of hydrogen-related defects introduced in the InP lattice due to the implantation and subsequent annealing is investigated as a function of the implantation temperature, that was varied from -15 °C to 230 °C. Implanted and annealed samples were analyzed by optical microscopy, SIMS and FTIR. The obtained results are discussed in terms of the formation of VInHx complexes that seems to be efficient H trapping centers, probably being the precursors of the fracture process in InP.
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