多晶PZT薄膜结构与纳米级压电性能的厚度依赖性

E. Araújo, E. C. Lima, I. Bdikin, A. Kholkin
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引用次数: 0

摘要

采用聚合化学方法在Pt(111)/Ti/SiO2/Si衬底上沉积了锆钛酸铅(Pb(Zr0.50Ti0.50)O3 (PZT)薄膜,研究了薄膜的相变机理以及薄膜厚度对薄膜结构、介电和压电性能的影响。在350℃以上热解的PZT薄膜中,焦绿石相和钙钛矿相共存,而在300℃以下热解的薄膜中,只有钙钛矿相生长。对于无焦绿石的PZT薄膜,在薄膜-衬底界面附近观察到一个小的(100)取向趋势。最后,我们证明了所研究的PZT薄膜中存在自极化效应。结果表明,薄膜衬底界面附近的肖特基势垒和/或机械耦合并不是薄膜中观察到的自极化效应的主要原因。
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Thickness dependence of structure and piezoelectric properties at nanoscale of polycrystalline PZT thin films
Lead zirconate titanate Pb(Zr0.50Ti0.50)O3 (PZT) thin films were deposited by a polymeric chemical method on Pt(111)/Ti/SiO2/Si substrates to understand the mechanisms of phase transformations and the effect of film thickness on the structure, dielectric and piezoelectric properties in these films. PZT films pyrolyzed at temperatures higher than 350°C present a coexistence of pyrochlore and perovskite phases, while only perovskite phase grows in films pyrolyzed at temperatures lower than 300°C. For pyrochlore-free PZT thin films, a small (100) orientation tendency near the film-substrate interface was observed. Finally, we demonstrate the existence of a self-polarization effect in the studied PZT thin films. Results suggest that Schottky barriers and/or mechanical coupling near the film substrate interface are not primarily responsible for the observed self-polarization effect in our films.
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