{"title":"一种用于热敏电阻的新型过渡金属氧化物传感器材料:氧化锰钒","authors":"Girish M. Gouda, C. L. Nagendra","doi":"10.1109/ISPTS.2012.6260898","DOIUrl":null,"url":null,"abstract":"Manganese vanadium oxide thermistor materials both in bulk and thin film form have been prepared and characterized. The bulk materials synthesized by ceramic tape casting and solid state sintering are crystalline in nature while thin films are amorphous even after post deposition annealing at high temperature. The electrical properties' study clearly shows that these materials follow a typical characteristic of negative temperature coefficient (NTC) of resistivity which is attributed to small polaron hopping. The thin film samples have direct optical band gap and shows increased absorption in the infrared region.","PeriodicalId":6431,"journal":{"name":"2012 1st International Symposium on Physics and Technology of Sensors (ISPTS-1)","volume":"40 1","pages":"125-128"},"PeriodicalIF":0.0000,"publicationDate":"2012-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"A new transition metal oxide sensor material for thermistor applications: Manganese-vanadium-oxide\",\"authors\":\"Girish M. Gouda, C. L. Nagendra\",\"doi\":\"10.1109/ISPTS.2012.6260898\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Manganese vanadium oxide thermistor materials both in bulk and thin film form have been prepared and characterized. The bulk materials synthesized by ceramic tape casting and solid state sintering are crystalline in nature while thin films are amorphous even after post deposition annealing at high temperature. The electrical properties' study clearly shows that these materials follow a typical characteristic of negative temperature coefficient (NTC) of resistivity which is attributed to small polaron hopping. The thin film samples have direct optical band gap and shows increased absorption in the infrared region.\",\"PeriodicalId\":6431,\"journal\":{\"name\":\"2012 1st International Symposium on Physics and Technology of Sensors (ISPTS-1)\",\"volume\":\"40 1\",\"pages\":\"125-128\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-03-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 1st International Symposium on Physics and Technology of Sensors (ISPTS-1)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPTS.2012.6260898\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 1st International Symposium on Physics and Technology of Sensors (ISPTS-1)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPTS.2012.6260898","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A new transition metal oxide sensor material for thermistor applications: Manganese-vanadium-oxide
Manganese vanadium oxide thermistor materials both in bulk and thin film form have been prepared and characterized. The bulk materials synthesized by ceramic tape casting and solid state sintering are crystalline in nature while thin films are amorphous even after post deposition annealing at high temperature. The electrical properties' study clearly shows that these materials follow a typical characteristic of negative temperature coefficient (NTC) of resistivity which is attributed to small polaron hopping. The thin film samples have direct optical band gap and shows increased absorption in the infrared region.
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