{"title":"在1d-1dEdge重叠的TFET中隧道电流增强","authors":"S. Agarwal, E. Yablonovitch","doi":"10.1109/DRC.2012.6256926","DOIUrl":null,"url":null,"abstract":"In order to reduce the power consumption of modern electronics, the operating voltage needs to be significantly reduced. Tunneling field effect transistors (TFET's) have the potential to do this. As shown in figure, current can flow as soon as the conduction band and valence band overlap. However, the shape of the turn on is dependent on the density of states (DOS) of each band. The DOS can be controlled by changing the dimensionality of the device.","PeriodicalId":6808,"journal":{"name":"70th Device Research Conference","volume":"29 1","pages":"63-64"},"PeriodicalIF":0.0000,"publicationDate":"2012-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Enhanced tunneling current in 1d-1dEdge overlapped TFET's\",\"authors\":\"S. Agarwal, E. Yablonovitch\",\"doi\":\"10.1109/DRC.2012.6256926\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In order to reduce the power consumption of modern electronics, the operating voltage needs to be significantly reduced. Tunneling field effect transistors (TFET's) have the potential to do this. As shown in figure, current can flow as soon as the conduction band and valence band overlap. However, the shape of the turn on is dependent on the density of states (DOS) of each band. The DOS can be controlled by changing the dimensionality of the device.\",\"PeriodicalId\":6808,\"journal\":{\"name\":\"70th Device Research Conference\",\"volume\":\"29 1\",\"pages\":\"63-64\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-06-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"70th Device Research Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DRC.2012.6256926\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"70th Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2012.6256926","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Enhanced tunneling current in 1d-1dEdge overlapped TFET's
In order to reduce the power consumption of modern electronics, the operating voltage needs to be significantly reduced. Tunneling field effect transistors (TFET's) have the potential to do this. As shown in figure, current can flow as soon as the conduction band and valence band overlap. However, the shape of the turn on is dependent on the density of states (DOS) of each band. The DOS can be controlled by changing the dimensionality of the device.
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