用于增强能量收集的InGaN和硅太阳能电池的异质集成

2012 38th IEEE Photovoltaic Specialists Conference Pub Date : 2012-06-03 DOI:10.1109/PVSC.2012.6318231

N. Das, M. Reed, A. Sampath, H. Shen, M. Wraback, R. Farrell, M. Iza, S. C. Cruz, J. R. Lang, N. Young, Y. Terao, C. Neufeld, S. Keller, S. Nakamura, S. Denbaars, U. Mishra, J. Speck

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引用次数: 2

摘要

我们在此报告使用底部为硅太阳能电池(可见光-红外光)和顶部为InGaN太阳能电池(紫外光)的混合太阳能电池来增强太阳能收集。30 QW周期的InGaN太阳能电池在380 nm处的峰值外量子效率(EQE)为40%，开路电压(Voc)为2.0 V，短路电流(Isc)为0.8 mA/cm2，填充因子为55%。我们已经证明，在硅太阳能电池上应用InGaN“有源窗口”可以抵消太阳能电池板生产过程中通常遭受的封装功率损失。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Heterogeneous integration of InGaN and Silicon solar cells for enhanced energy harvesting

We report here enhanced solar energy harvesting using a hybrid solar cell with silicon solar cells (visible-infrared light) on bottom and an InGaN solar cell (UV light) on top. The InGaN solar cell with 30 QW periods has peak external quantum efficiency (EQE) of 40 % at 380 nm, an open circuit voltage (Voc) of 2.0 V, a short circuit current (Isc) of 0.8 mA/cm2, and fill factor of 55%. We have demonstrated that the application of an InGaN “active window” to a silicon solar cell counterbalances the encapsulation power loss typically suffered during production of a solar panel.

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2012 38th IEEE Photovoltaic Specialists Conference

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