{"title":"常压MOVPE生长极低阈值电流密度GaInAs/Al(Ga)InAs激光结构","authors":"R. Gessner, M. Beschorner, M. Druminski","doi":"10.1109/ICIPRM.1991.147341","DOIUrl":null,"url":null,"abstract":"The growth of (Al)GaInAs/Al(Ga)InAs structures of high quality for laser devices using metalorganic vapor-phase epitaxy (MOVPE) at atmospheric pressure is described. SeH/sub 2/ and DEZn have been used as the dopant precursors. Se is an appropriate dopant for the n-type confinement layers of lasers, showing a distinctly higher electrical activation in AlInAs than Si. Zn is superior to Mg as a dopant for the p-type confinement layers of lasers as its apparent diffusion coefficient is about one order of magnitude lower than that of Mg in AlInAs. Broad-area double-heterostructure (DH) lasers (device length=800 mu m) operating at 1.66 mu m and 1.55 mu m are shown to have I/sub th/ values as low as 2.3 kA cm/sup 2/ and 1.5 kA/cm/sup 2/, respectively. With broad-area separate-confinement-heterostructure multiple-quantum-well (SCH-MQW) lasers (device length=800 mu m) emitting at 1.524 mu m, threshold current densities as low is 0.92 kA/cm/sup 2/ can be achieved.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"13 1","pages":"220-223"},"PeriodicalIF":0.0000,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Very low threshold current density (Al)GaInAs/Al(Ga)InAs laser structures grown by atmospheric pressure MOVPE\",\"authors\":\"R. Gessner, M. Beschorner, M. Druminski\",\"doi\":\"10.1109/ICIPRM.1991.147341\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The growth of (Al)GaInAs/Al(Ga)InAs structures of high quality for laser devices using metalorganic vapor-phase epitaxy (MOVPE) at atmospheric pressure is described. SeH/sub 2/ and DEZn have been used as the dopant precursors. Se is an appropriate dopant for the n-type confinement layers of lasers, showing a distinctly higher electrical activation in AlInAs than Si. Zn is superior to Mg as a dopant for the p-type confinement layers of lasers as its apparent diffusion coefficient is about one order of magnitude lower than that of Mg in AlInAs. Broad-area double-heterostructure (DH) lasers (device length=800 mu m) operating at 1.66 mu m and 1.55 mu m are shown to have I/sub th/ values as low as 2.3 kA cm/sup 2/ and 1.5 kA/cm/sup 2/, respectively. With broad-area separate-confinement-heterostructure multiple-quantum-well (SCH-MQW) lasers (device length=800 mu m) emitting at 1.524 mu m, threshold current densities as low is 0.92 kA/cm/sup 2/ can be achieved.<<ETX>>\",\"PeriodicalId\":6444,\"journal\":{\"name\":\"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials\",\"volume\":\"13 1\",\"pages\":\"220-223\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1991-04-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1991.147341\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1991.147341","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Very low threshold current density (Al)GaInAs/Al(Ga)InAs laser structures grown by atmospheric pressure MOVPE
The growth of (Al)GaInAs/Al(Ga)InAs structures of high quality for laser devices using metalorganic vapor-phase epitaxy (MOVPE) at atmospheric pressure is described. SeH/sub 2/ and DEZn have been used as the dopant precursors. Se is an appropriate dopant for the n-type confinement layers of lasers, showing a distinctly higher electrical activation in AlInAs than Si. Zn is superior to Mg as a dopant for the p-type confinement layers of lasers as its apparent diffusion coefficient is about one order of magnitude lower than that of Mg in AlInAs. Broad-area double-heterostructure (DH) lasers (device length=800 mu m) operating at 1.66 mu m and 1.55 mu m are shown to have I/sub th/ values as low as 2.3 kA cm/sup 2/ and 1.5 kA/cm/sup 2/, respectively. With broad-area separate-confinement-heterostructure multiple-quantum-well (SCH-MQW) lasers (device length=800 mu m) emitting at 1.524 mu m, threshold current densities as low is 0.92 kA/cm/sup 2/ can be achieved.<>
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