Study of Chemical Vapor Deposition of Manganese on Porous SiCOH Low-k Dielectrics Using Bis(ethylcyclopentadienyl)manganese

MnO/MnSiO3-based layers were formed on porous SiCOH low-k dielectrics by Chemical Vapor Deposition (CVD) of Mn from Bisethylcyclopentadienyl manganese. The oxide phase formation is driven by the moisture desorbing from the low-k films. The silicate phase is defined by silanol groups chemisorbed on the low-k surface. The experimental results suggest that formation of thin Mn-based copper diffusion barrier (pore sealing) by CVD is limited to dielectrics having a pore size smaller than the Mn precursor molecules. In the case of larger pore sizes, Mn is deposited inside the dielectric on the pores surface and the layer cannot be a diffusion barrier. © 2012 The Electrochemical Society. [DOI: 10.1149/2.006206esl] All rights reserved.