基于晶圆键合技术的高q垂直耦合微谐振器

K. Djordjev, S. Choi, S. Choi, P. Dapkus
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引用次数: 3

摘要

只提供摘要形式。我们展示了基于InP材料系统的高Q垂直耦合无源微盘谐振器,作为利用有源器件的第一步,并了解限制其性能的参数。选择垂直耦合是因为与横向几何结构相比,它具有两个主要优点,即:i)通过外延生长精确控制耦合系数;ii)波导和谐振器的材料组成可以独立优化和生长,这有利于有源微磁盘器件的设计- ON/OFF开关,调制器和微磁盘激光器。
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High-Q vertically-coupled microresonators built by wafer-bonding technique
Summary form only given. We demonstrate high Q vertically coupled passive microdisk resonators based on the InP material system as a first step towards utilizing active devices, and to understand the parameters limiting their performance. Vertical coupling is chosen because it exhibits two major advantages compared to the lateral geometry, namely: i) precise control of the coupling coefficient by epitaxial growth; ii) the material composition of the waveguides and resonator can be optimized and grown independently, which facilitates the design of active microdisk devices - ON/OFF switches, modulators and microdisk lasers.
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