{"title":"基于晶圆键合技术的高q垂直耦合微谐振器","authors":"K. Djordjev, S. Choi, S. Choi, P. Dapkus","doi":"10.1109/LEOS.2001.968896","DOIUrl":null,"url":null,"abstract":"Summary form only given. We demonstrate high Q vertically coupled passive microdisk resonators based on the InP material system as a first step towards utilizing active devices, and to understand the parameters limiting their performance. Vertical coupling is chosen because it exhibits two major advantages compared to the lateral geometry, namely: i) precise control of the coupling coefficient by epitaxial growth; ii) the material composition of the waveguides and resonator can be optimized and grown independently, which facilitates the design of active microdisk devices - ON/OFF switches, modulators and microdisk lasers.","PeriodicalId":18008,"journal":{"name":"LEOS 2001. 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society (Cat. No.01CH37242)","volume":"30 1","pages":"509-510 vol.2"},"PeriodicalIF":0.0000,"publicationDate":"2001-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"High-Q vertically-coupled microresonators built by wafer-bonding technique\",\"authors\":\"K. Djordjev, S. Choi, S. Choi, P. Dapkus\",\"doi\":\"10.1109/LEOS.2001.968896\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Summary form only given. We demonstrate high Q vertically coupled passive microdisk resonators based on the InP material system as a first step towards utilizing active devices, and to understand the parameters limiting their performance. Vertical coupling is chosen because it exhibits two major advantages compared to the lateral geometry, namely: i) precise control of the coupling coefficient by epitaxial growth; ii) the material composition of the waveguides and resonator can be optimized and grown independently, which facilitates the design of active microdisk devices - ON/OFF switches, modulators and microdisk lasers.\",\"PeriodicalId\":18008,\"journal\":{\"name\":\"LEOS 2001. 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society (Cat. No.01CH37242)\",\"volume\":\"30 1\",\"pages\":\"509-510 vol.2\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2001-11-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"LEOS 2001. 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society (Cat. No.01CH37242)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/LEOS.2001.968896\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"LEOS 2001. 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society (Cat. No.01CH37242)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/LEOS.2001.968896","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High-Q vertically-coupled microresonators built by wafer-bonding technique
Summary form only given. We demonstrate high Q vertically coupled passive microdisk resonators based on the InP material system as a first step towards utilizing active devices, and to understand the parameters limiting their performance. Vertical coupling is chosen because it exhibits two major advantages compared to the lateral geometry, namely: i) precise control of the coupling coefficient by epitaxial growth; ii) the material composition of the waveguides and resonator can be optimized and grown independently, which facilitates the design of active microdisk devices - ON/OFF switches, modulators and microdisk lasers.