{"title":"InGaAs/InP量子阱的特性和突然性以及GSMBE生长的量子阱的光电应用","authors":"H. Iwamura, H. Uenohara, T. Kagawa, M. Naganuma","doi":"10.1109/ICIPRM.1991.147389","DOIUrl":null,"url":null,"abstract":"High quality quantum well structures of InGaAs/InGaAsP and InAlAs/InGaAsP were grown by gas source molecular beam epitaxy (GSMBE). Low-temperature photoluminescence (PL) measurements, transverse electromagnetic (TEM) observation of the cleaved edge, and high-energy electron diffraction (RHEED) patterns obtained during growth of the interface are used to investigate the characteristics of the heterointerface. Multiple quantum well separate confinement heterostructure (MQW-SCH) laser diodes, voltage-controlled bistable laser diodes, and InGaAsP/InAlAs superlattice avalanche photodiodes are discussed as device applications.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"286 1","pages":"353-358"},"PeriodicalIF":0.0000,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Characteristics and abruptness of InGaAs/InP quantum well and optoelectronic applications of quantum wells grown by GSMBE\",\"authors\":\"H. Iwamura, H. Uenohara, T. Kagawa, M. Naganuma\",\"doi\":\"10.1109/ICIPRM.1991.147389\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"High quality quantum well structures of InGaAs/InGaAsP and InAlAs/InGaAsP were grown by gas source molecular beam epitaxy (GSMBE). Low-temperature photoluminescence (PL) measurements, transverse electromagnetic (TEM) observation of the cleaved edge, and high-energy electron diffraction (RHEED) patterns obtained during growth of the interface are used to investigate the characteristics of the heterointerface. Multiple quantum well separate confinement heterostructure (MQW-SCH) laser diodes, voltage-controlled bistable laser diodes, and InGaAsP/InAlAs superlattice avalanche photodiodes are discussed as device applications.<<ETX>>\",\"PeriodicalId\":6444,\"journal\":{\"name\":\"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials\",\"volume\":\"286 1\",\"pages\":\"353-358\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1991-04-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1991.147389\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1991.147389","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Characteristics and abruptness of InGaAs/InP quantum well and optoelectronic applications of quantum wells grown by GSMBE
High quality quantum well structures of InGaAs/InGaAsP and InAlAs/InGaAsP were grown by gas source molecular beam epitaxy (GSMBE). Low-temperature photoluminescence (PL) measurements, transverse electromagnetic (TEM) observation of the cleaved edge, and high-energy electron diffraction (RHEED) patterns obtained during growth of the interface are used to investigate the characteristics of the heterointerface. Multiple quantum well separate confinement heterostructure (MQW-SCH) laser diodes, voltage-controlled bistable laser diodes, and InGaAsP/InAlAs superlattice avalanche photodiodes are discussed as device applications.<>
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