无结可变势垒晶体管(VBT)的简单紧凑模型

2013 Spanish Conference on Electron Devices Pub Date : 2013-03-21 DOI:10.1109/CDE.2013.6481344

O. Moldovan, F. Lime, B. Nae, B. Iñíguez

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引用次数: 4

摘要

本文提出了一种计算无结可变势垒晶体管漏极电流的简单紧凑模型。结果与两种TCAD仿真工具(COMSOL和ATLAS)吻合较好，证明了该模型的准确性。这是第一次为这类晶体管推导出一个紧凑的漏极电流模型。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A simple compact model for the junctionless Variable Barrier Transistor (VBT)

In this paper we present a simple compact model for the computation of the drain current in a new type of transistor, a junctionless VBT (Variable Barrier Transistor).A good agreement between our results and two TCAD simulation tools (COMSOL and ATLAS), proves the accuracy of this model. It is the first time that a compact drain current model is derived for this type of transistor.

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2013 Spanish Conference on Electron Devices

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