{"title":"基于空间信息、通信和能量采集技术的c波段物理射频能量采集器","authors":"S. Kawasaki, S. Yoshida, T. Nakaoka, K. Nishikawa","doi":"10.1109/MWSYM.2018.8439367","DOIUrl":null,"url":null,"abstract":"In this paper, novel ICs made by different types of semi-conductors as the hybrid semiconductor integrated circuit, HySIC, are introduced. A C-band compact full Si rectifier and a HySIC RF rectifier operating at 5.8 GHz were described using 0.18μm Si CMOS process and chip-to-wafer bonding. From them, RF -DC conversion efficiencies were measured as about 25% and 10%, respectively. Further, a wide power-range HySIC RF energy harvester by combining the rectifiers implemented on the Si substrate was made and the fundamental data were successfully obtained","PeriodicalId":6675,"journal":{"name":"2018 IEEE/MTT-S International Microwave Symposium - IMS","volume":"12 1","pages":"1265-1268"},"PeriodicalIF":0.0000,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"The C-Band HySIC RF Energy Harvester Based on the Space Information, Communication and Energy Harvesting Technology\",\"authors\":\"S. Kawasaki, S. Yoshida, T. Nakaoka, K. Nishikawa\",\"doi\":\"10.1109/MWSYM.2018.8439367\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, novel ICs made by different types of semi-conductors as the hybrid semiconductor integrated circuit, HySIC, are introduced. A C-band compact full Si rectifier and a HySIC RF rectifier operating at 5.8 GHz were described using 0.18μm Si CMOS process and chip-to-wafer bonding. From them, RF -DC conversion efficiencies were measured as about 25% and 10%, respectively. Further, a wide power-range HySIC RF energy harvester by combining the rectifiers implemented on the Si substrate was made and the fundamental data were successfully obtained\",\"PeriodicalId\":6675,\"journal\":{\"name\":\"2018 IEEE/MTT-S International Microwave Symposium - IMS\",\"volume\":\"12 1\",\"pages\":\"1265-1268\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE/MTT-S International Microwave Symposium - IMS\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.2018.8439367\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE/MTT-S International Microwave Symposium - IMS","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.2018.8439367","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
摘要
本文介绍了由不同类型的半导体制成的新型集成电路，如混合半导体集成电路(HySIC)。采用0.18μm Si CMOS工艺和芯片-晶圆键合技术，设计了工作频率为5.8 GHz的c波段紧凑型全硅整流器和HySIC射频整流器。由此，射频-直流转换效率分别约为25%和10%。此外，结合在硅衬底上实现的整流器，制作了宽功率范围的HySIC射频能量采集器，并成功获得了基本数据
The C-Band HySIC RF Energy Harvester Based on the Space Information, Communication and Energy Harvesting Technology
In this paper, novel ICs made by different types of semi-conductors as the hybrid semiconductor integrated circuit, HySIC, are introduced. A C-band compact full Si rectifier and a HySIC RF rectifier operating at 5.8 GHz were described using 0.18μm Si CMOS process and chip-to-wafer bonding. From them, RF -DC conversion efficiencies were measured as about 25% and 10%, respectively. Further, a wide power-range HySIC RF energy harvester by combining the rectifiers implemented on the Si substrate was made and the fundamental data were successfully obtained
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