R. Rodríguez, B. González, J. García, M. Marrero-Martin, A. Hernández
{"title":"基于SOI技术的超宽带rfid研究","authors":"R. Rodríguez, B. González, J. García, M. Marrero-Martin, A. Hernández","doi":"10.1109/CDE.2013.6481348","DOIUrl":null,"url":null,"abstract":"The objective of this work is to study the possibility of implementing SOI rectifiers for UWB RFIDs with undoped Double Gate MOSFETs (DG-MOSFETs). For that purpose we use two commercial TCAD tools, Sentaurus Device (created by Synopsys) and ADS (created by Agilent), wherein a large signal circuit model derived for the transistors is implemented with Verilog-A. Once the DG-MOSFETs output characteristics are fit, the rectifier performance at high frequencies is simulated; numerical and electrical results are successfully compared.","PeriodicalId":6614,"journal":{"name":"2013 Spanish Conference on Electron Devices","volume":"4 1","pages":"83-86"},"PeriodicalIF":0.0000,"publicationDate":"2013-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Study of RFIDs with SOI technology for UWB\",\"authors\":\"R. Rodríguez, B. González, J. García, M. Marrero-Martin, A. Hernández\",\"doi\":\"10.1109/CDE.2013.6481348\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The objective of this work is to study the possibility of implementing SOI rectifiers for UWB RFIDs with undoped Double Gate MOSFETs (DG-MOSFETs). For that purpose we use two commercial TCAD tools, Sentaurus Device (created by Synopsys) and ADS (created by Agilent), wherein a large signal circuit model derived for the transistors is implemented with Verilog-A. Once the DG-MOSFETs output characteristics are fit, the rectifier performance at high frequencies is simulated; numerical and electrical results are successfully compared.\",\"PeriodicalId\":6614,\"journal\":{\"name\":\"2013 Spanish Conference on Electron Devices\",\"volume\":\"4 1\",\"pages\":\"83-86\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-03-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 Spanish Conference on Electron Devices\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CDE.2013.6481348\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 Spanish Conference on Electron Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CDE.2013.6481348","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The objective of this work is to study the possibility of implementing SOI rectifiers for UWB RFIDs with undoped Double Gate MOSFETs (DG-MOSFETs). For that purpose we use two commercial TCAD tools, Sentaurus Device (created by Synopsys) and ADS (created by Agilent), wherein a large signal circuit model derived for the transistors is implemented with Verilog-A. Once the DG-MOSFETs output characteristics are fit, the rectifier performance at high frequencies is simulated; numerical and electrical results are successfully compared.
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