{"title":"数值孔径增大透镜与标准地下显微镜的比较","authors":"S. Ippolito, B. Goldberg, M. Unlu","doi":"10.1109/LEOS.2001.969044","DOIUrl":null,"url":null,"abstract":"Subsurface inspection of a Si integrated circuit (IC) by a Numerical Aperture Increasing Lens (NAIL) microscope has yielded a lateral spatial resolution of better than 0.23 /spl mu/m. We compare NAIL microscopy to standard subsurface microscopy using the Hamamatsu /spl mu/AMOS-200, IC Failure Analysis System. The NAIL improves the microscope's lateral spatial resolution from /spl sim/1.7 /spl mu/m to /spl sim/0.3 /spl mu/m. It is difficult to obtain the longitudinal spatial resolution because the sample has multiple longitudinal dielectric interfaces.","PeriodicalId":18008,"journal":{"name":"LEOS 2001. 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society (Cat. No.01CH37242)","volume":"52 1","pages":"774-775 vol.2"},"PeriodicalIF":0.0000,"publicationDate":"2001-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Comparison of numerical aperture increasing lens and standard subsurface microscopy\",\"authors\":\"S. Ippolito, B. Goldberg, M. Unlu\",\"doi\":\"10.1109/LEOS.2001.969044\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Subsurface inspection of a Si integrated circuit (IC) by a Numerical Aperture Increasing Lens (NAIL) microscope has yielded a lateral spatial resolution of better than 0.23 /spl mu/m. We compare NAIL microscopy to standard subsurface microscopy using the Hamamatsu /spl mu/AMOS-200, IC Failure Analysis System. The NAIL improves the microscope's lateral spatial resolution from /spl sim/1.7 /spl mu/m to /spl sim/0.3 /spl mu/m. It is difficult to obtain the longitudinal spatial resolution because the sample has multiple longitudinal dielectric interfaces.\",\"PeriodicalId\":18008,\"journal\":{\"name\":\"LEOS 2001. 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society (Cat. No.01CH37242)\",\"volume\":\"52 1\",\"pages\":\"774-775 vol.2\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2001-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"LEOS 2001. 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society (Cat. No.01CH37242)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/LEOS.2001.969044\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"LEOS 2001. 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society (Cat. No.01CH37242)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/LEOS.2001.969044","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Comparison of numerical aperture increasing lens and standard subsurface microscopy
Subsurface inspection of a Si integrated circuit (IC) by a Numerical Aperture Increasing Lens (NAIL) microscope has yielded a lateral spatial resolution of better than 0.23 /spl mu/m. We compare NAIL microscopy to standard subsurface microscopy using the Hamamatsu /spl mu/AMOS-200, IC Failure Analysis System. The NAIL improves the microscope's lateral spatial resolution from /spl sim/1.7 /spl mu/m to /spl sim/0.3 /spl mu/m. It is difficult to obtain the longitudinal spatial resolution because the sample has multiple longitudinal dielectric interfaces.
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