John Davis, Paul Bunce, Diana M. Henderson, Y. Chan, U. Srinivasan, D. Rodko, P. Patel, T. Knips, T. Werner
{"title":"用于32nm zEnterprise™EC12处理器的7GHz L1缓存sram","authors":"John Davis, Paul Bunce, Diana M. Henderson, Y. Chan, U. Srinivasan, D. Rodko, P. Patel, T. Knips, T. Werner","doi":"10.1109/ISSCC.2013.6487754","DOIUrl":null,"url":null,"abstract":"The L1 cache for the 5.5 GHz 32nm zEnterprise™ EC12 processor requires SRAM designs that make aggressive use of dynamic circuitry. As technology has scaled and transistor counts have grown, random device variability [1] and power limitations have become significant challenges. In particular, random device-variability-induced pulse shrinkage and misalignment in dynamic signals must be carefully addressed. Described here are a series of new design approaches enabling L1 cache SRAM operation at 7GHz, including a 3-level bitline hierarchy, decreased dynamic path lengths, localized read enables, and a power-savings mechanism in which selective columns can be partially powered down.","PeriodicalId":6378,"journal":{"name":"2013 IEEE International Solid-State Circuits Conference Digest of Technical Papers","volume":"6 1","pages":"324-325"},"PeriodicalIF":0.0000,"publicationDate":"2013-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"7GHz L1 cache SRAMs for the 32nm zEnterprise™ EC12 processor\",\"authors\":\"John Davis, Paul Bunce, Diana M. Henderson, Y. Chan, U. Srinivasan, D. Rodko, P. Patel, T. Knips, T. Werner\",\"doi\":\"10.1109/ISSCC.2013.6487754\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The L1 cache for the 5.5 GHz 32nm zEnterprise™ EC12 processor requires SRAM designs that make aggressive use of dynamic circuitry. As technology has scaled and transistor counts have grown, random device variability [1] and power limitations have become significant challenges. In particular, random device-variability-induced pulse shrinkage and misalignment in dynamic signals must be carefully addressed. Described here are a series of new design approaches enabling L1 cache SRAM operation at 7GHz, including a 3-level bitline hierarchy, decreased dynamic path lengths, localized read enables, and a power-savings mechanism in which selective columns can be partially powered down.\",\"PeriodicalId\":6378,\"journal\":{\"name\":\"2013 IEEE International Solid-State Circuits Conference Digest of Technical Papers\",\"volume\":\"6 1\",\"pages\":\"324-325\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-03-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE International Solid-State Circuits Conference Digest of Technical Papers\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISSCC.2013.6487754\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE International Solid-State Circuits Conference Digest of Technical Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSCC.2013.6487754","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
7GHz L1 cache SRAMs for the 32nm zEnterprise™ EC12 processor
The L1 cache for the 5.5 GHz 32nm zEnterprise™ EC12 processor requires SRAM designs that make aggressive use of dynamic circuitry. As technology has scaled and transistor counts have grown, random device variability [1] and power limitations have become significant challenges. In particular, random device-variability-induced pulse shrinkage and misalignment in dynamic signals must be carefully addressed. Described here are a series of new design approaches enabling L1 cache SRAM operation at 7GHz, including a 3-level bitline hierarchy, decreased dynamic path lengths, localized read enables, and a power-savings mechanism in which selective columns can be partially powered down.