J. Oshinowo, A. Forchel, D. Grutzmacher, M. Stollenwerk
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RTA study of thermal stability and interdiffusion of InGaAs/InP quantum wells-the influence of InGaAs cap layers
A study of the thermal stability of InGaAs/InP quantum wells with different top barrier compositions that used rapid thermal annealing at temperatures between 600 degrees C and 950 degrees C (annealing time 1 min) is discussed. The thermal interdiffusion effects were evaluated by photoluminescence spectroscopy. From the temperature dependence of the luminescence energy shifts the interdiffusion coefficients and activation energies are determined.<>
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