X. Vendrell, L. Mestres, O. Raymond, D. A. Ochoa, J. García
{"title":"高取向La掺杂(K, Na)NbO3铁电薄膜","authors":"X. Vendrell, L. Mestres, O. Raymond, D. A. Ochoa, J. García","doi":"10.1109/ISAF.2012.6297793","DOIUrl":null,"url":null,"abstract":"Lead-free (K<sub>0.5</sub>Na<sub>0.5</sub>)<sub>1-3x</sub>La<sub>x</sub>NbO<sub>3</sub> (x = 0.0-0.005) thin films were synthesized by chemical solution deposition. The X-ray analysis showed that (K<sub>0.5</sub>Na<sub>0.5</sub>)NbO<sub>3</sub> (KNN) and La doped KNN single-phase thin films were obtained with a [100] preferred orientation. When doping with La, thin films exhibited a remarkably low leakage current and higher dielectric properties.","PeriodicalId":20497,"journal":{"name":"Proceedings of ISAF-ECAPD-PFM 2012","volume":"37 1","pages":"1-4"},"PeriodicalIF":0.0000,"publicationDate":"2012-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Highly oriented La doped (K, Na)NbO3 ferroelectric thin films\",\"authors\":\"X. Vendrell, L. Mestres, O. Raymond, D. A. Ochoa, J. García\",\"doi\":\"10.1109/ISAF.2012.6297793\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Lead-free (K<sub>0.5</sub>Na<sub>0.5</sub>)<sub>1-3x</sub>La<sub>x</sub>NbO<sub>3</sub> (x = 0.0-0.005) thin films were synthesized by chemical solution deposition. The X-ray analysis showed that (K<sub>0.5</sub>Na<sub>0.5</sub>)NbO<sub>3</sub> (KNN) and La doped KNN single-phase thin films were obtained with a [100] preferred orientation. When doping with La, thin films exhibited a remarkably low leakage current and higher dielectric properties.\",\"PeriodicalId\":20497,\"journal\":{\"name\":\"Proceedings of ISAF-ECAPD-PFM 2012\",\"volume\":\"37 1\",\"pages\":\"1-4\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-07-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of ISAF-ECAPD-PFM 2012\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISAF.2012.6297793\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of ISAF-ECAPD-PFM 2012","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISAF.2012.6297793","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Highly oriented La doped (K, Na)NbO3 ferroelectric thin films
Lead-free (K0.5Na0.5)1-3xLaxNbO3 (x = 0.0-0.005) thin films were synthesized by chemical solution deposition. The X-ray analysis showed that (K0.5Na0.5)NbO3 (KNN) and La doped KNN single-phase thin films were obtained with a [100] preferred orientation. When doping with La, thin films exhibited a remarkably low leakage current and higher dielectric properties.
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