S. Ou, P. Kuo, S. Ma, C. Shen, W. Tang, D. Chiang, C. Lee
{"title":"相变(GeSbSn)100-xCox光记录薄膜的微观结构和热性能","authors":"S. Ou, P. Kuo, S. Ma, C. Shen, W. Tang, D. Chiang, C. Lee","doi":"10.1109/INEC.2010.5424938","DOIUrl":null,"url":null,"abstract":"In this study, the (GeSbSn)<inf>100-x</inf>Co<inf>x</inf> films (x = 0 ∼ 13.3) were deposited on natural oxidized silicon wafer and glass substrate by dc magnetron co-sputtering of GeSbSn and Co targets. The thicknesses of the (GeSbSn)<inf>100-x</inf>Co<inf>x</inf>films and protective layer were 100 nm and 30 nm, respectively. The phase transition temperatures of (GeSbSn)<inf>100-x</inf>Co<inf>x</inf> films are decreased with Co content. It is found that the activation energy of the (GeSbSn)<inf>100-x</inf>Co<inf>x</inf> films will decrease from 1.53 eV to 0.55 eV as Co content increased from 0 at.% to 13.3 at.%.","PeriodicalId":6390,"journal":{"name":"2010 3rd International Nanoelectronics Conference (INEC)","volume":"16 1","pages":"1216-1217"},"PeriodicalIF":0.0000,"publicationDate":"2010-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Microstructure and thermal properties of phase change (GeSbSn)100-xCox optical recording films\",\"authors\":\"S. Ou, P. Kuo, S. Ma, C. Shen, W. Tang, D. Chiang, C. Lee\",\"doi\":\"10.1109/INEC.2010.5424938\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this study, the (GeSbSn)<inf>100-x</inf>Co<inf>x</inf> films (x = 0 ∼ 13.3) were deposited on natural oxidized silicon wafer and glass substrate by dc magnetron co-sputtering of GeSbSn and Co targets. The thicknesses of the (GeSbSn)<inf>100-x</inf>Co<inf>x</inf>films and protective layer were 100 nm and 30 nm, respectively. The phase transition temperatures of (GeSbSn)<inf>100-x</inf>Co<inf>x</inf> films are decreased with Co content. It is found that the activation energy of the (GeSbSn)<inf>100-x</inf>Co<inf>x</inf> films will decrease from 1.53 eV to 0.55 eV as Co content increased from 0 at.% to 13.3 at.%.\",\"PeriodicalId\":6390,\"journal\":{\"name\":\"2010 3rd International Nanoelectronics Conference (INEC)\",\"volume\":\"16 1\",\"pages\":\"1216-1217\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-03-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 3rd International Nanoelectronics Conference (INEC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/INEC.2010.5424938\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 3rd International Nanoelectronics Conference (INEC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/INEC.2010.5424938","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Microstructure and thermal properties of phase change (GeSbSn)100-xCox optical recording films
In this study, the (GeSbSn)100-xCox films (x = 0 ∼ 13.3) were deposited on natural oxidized silicon wafer and glass substrate by dc magnetron co-sputtering of GeSbSn and Co targets. The thicknesses of the (GeSbSn)100-xCoxfilms and protective layer were 100 nm and 30 nm, respectively. The phase transition temperatures of (GeSbSn)100-xCox films are decreased with Co content. It is found that the activation energy of the (GeSbSn)100-xCox films will decrease from 1.53 eV to 0.55 eV as Co content increased from 0 at.% to 13.3 at.%.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
