相变(GeSbSn)100-xCox光记录薄膜的微观结构和热性能

2010 3rd International Nanoelectronics Conference (INEC) Pub Date : 2010-03-04 DOI:10.1109/INEC.2010.5424938

S. Ou, P. Kuo, S. Ma, C. Shen, W. Tang, D. Chiang, C. Lee

{"title":"相变(GeSbSn)100-xCox光记录薄膜的微观结构和热性能","authors":"S. Ou, P. Kuo, S. Ma, C. Shen, W. Tang, D. Chiang, C. Lee","doi":"10.1109/INEC.2010.5424938","DOIUrl":null,"url":null,"abstract":"In this study, the (GeSbSn)<inf>100-x</inf>Co<inf>x</inf> films (x = 0 ∼ 13.3) were deposited on natural oxidized silicon wafer and glass substrate by dc magnetron co-sputtering of GeSbSn and Co targets. The thicknesses of the (GeSbSn)<inf>100-x</inf>Co<inf>x</inf>films and protective layer were 100 nm and 30 nm, respectively. The phase transition temperatures of (GeSbSn)<inf>100-x</inf>Co<inf>x</inf> films are decreased with Co content. It is found that the activation energy of the (GeSbSn)<inf>100-x</inf>Co<inf>x</inf> films will decrease from 1.53 eV to 0.55 eV as Co content increased from 0 at.% to 13.3 at.%.","PeriodicalId":6390,"journal":{"name":"2010 3rd International Nanoelectronics Conference (INEC)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2010-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Microstructure and thermal properties of phase change (GeSbSn)100-xCox optical recording films\",\"authors\":\"S. Ou, P. Kuo, S. Ma, C. Shen, W. Tang, D. Chiang, C. Lee\",\"doi\":\"10.1109/INEC.2010.5424938\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this study, the (GeSbSn)<inf>100-x</inf>Co<inf>x</inf> films (x = 0 ∼ 13.3) were deposited on natural oxidized silicon wafer and glass substrate by dc magnetron co-sputtering of GeSbSn and Co targets. The thicknesses of the (GeSbSn)<inf>100-x</inf>Co<inf>x</inf>films and protective layer were 100 nm and 30 nm, respectively. The phase transition temperatures of (GeSbSn)<inf>100-x</inf>Co<inf>x</inf> films are decreased with Co content. It is found that the activation energy of the (GeSbSn)<inf>100-x</inf>Co<inf>x</inf> films will decrease from 1.53 eV to 0.55 eV as Co content increased from 0 at.% to 13.3 at.%.\",\"PeriodicalId\":6390,\"journal\":{\"name\":\"2010 3rd International Nanoelectronics Conference (INEC)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-03-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 3rd International Nanoelectronics Conference (INEC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/INEC.2010.5424938\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 3rd International Nanoelectronics Conference (INEC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/INEC.2010.5424938","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

在本研究中，通过直流磁控溅射GeSbSn和Co靶材，在天然氧化硅片和玻璃衬底上沉积了(GeSbSn)100-xCox薄膜(x = 0 ~ 13.3)。制备的(GeSbSn)100- xcox薄膜厚度为100 nm，保护层厚度为30 nm。(GeSbSn)100-xCox膜的相变温度随Co含量的增加而降低。结果表明，随着Co含量从0 at增加，(GeSbSn)100-xCox膜的活化能从1.53 eV降低到0.55 eV。%至13.3%。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

Microstructure and thermal properties of phase change (GeSbSn)100-xCox optical recording films

In this study, the (GeSbSn)100-xCox films (x = 0 ∼ 13.3) were deposited on natural oxidized silicon wafer and glass substrate by dc magnetron co-sputtering of GeSbSn and Co targets. The thicknesses of the (GeSbSn)100-xCoxfilms and protective layer were 100 nm and 30 nm, respectively. The phase transition temperatures of (GeSbSn)100-xCox films are decreased with Co content. It is found that the activation energy of the (GeSbSn)100-xCox films will decrease from 1.53 eV to 0.55 eV as Co content increased from 0 at.% to 13.3 at.%.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2010 3rd International Nanoelectronics Conference (INEC)

自引率

0.00%

发文量

期刊最新文献

A synthetic strategy of quantum dot-bioconjugate Effects of laser drilling through silicon substrate on MOSFET device characteristics The study of Y2O3-doping-induced size diversification of ZrO2 nanocrystals Antibacterial, antiviral, and antibiofilms nanoparticles High efficiency InGaP/GaAs solar cell with Sub-wavelength structure on AlInP window layer