室温下高探测率的谐振腔耦合红外探测器

2013 International Conference on Optical MEMS and Nanophotonics (OMN) Pub Date : 2013-11-11 DOI:10.1109/OMN.2013.6659057

A. Gawarikar, R. Shea, J. Talghader

{"title":"室温下高探测率的谐振腔耦合红外探测器","authors":"A. Gawarikar, R. Shea, J. Talghader","doi":"10.1109/OMN.2013.6659057","DOIUrl":null,"url":null,"abstract":"A spectrally selective uncooled long wave infrared detector with peak detectivity between 3×109 cm Hz1/2/W and 4.4×109 cm Hz1/2/W is reported. The detector is fabricated using silicon microfabrication techniques and integrates a thermoelectric readout with a resonant optical cavity to achieve wavelength selective absorption.","PeriodicalId":6334,"journal":{"name":"2013 International Conference on Optical MEMS and Nanophotonics (OMN)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2013-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Resonant cavity coupled infrared detectors with high detectivity operating at room temperature\",\"authors\":\"A. Gawarikar, R. Shea, J. Talghader\",\"doi\":\"10.1109/OMN.2013.6659057\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A spectrally selective uncooled long wave infrared detector with peak detectivity between 3×109 cm Hz1/2/W and 4.4×109 cm Hz1/2/W is reported. The detector is fabricated using silicon microfabrication techniques and integrates a thermoelectric readout with a resonant optical cavity to achieve wavelength selective absorption.\",\"PeriodicalId\":6334,\"journal\":{\"name\":\"2013 International Conference on Optical MEMS and Nanophotonics (OMN)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-11-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 International Conference on Optical MEMS and Nanophotonics (OMN)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/OMN.2013.6659057\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 International Conference on Optical MEMS and Nanophotonics (OMN)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/OMN.2013.6659057","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

报道了一种峰检出率在3×109 cm Hz1/2/W ~ 4.4×109 cm Hz1/2/W之间的光谱选择性非冷却长波红外探测器。该探测器采用硅微加工技术制造，并将热电读出器与谐振光学腔集成在一起，以实现波长选择性吸收。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

Resonant cavity coupled infrared detectors with high detectivity operating at room temperature

A spectrally selective uncooled long wave infrared detector with peak detectivity between 3×10⁹ cm Hz^1/2/W and 4.4×10⁹ cm Hz^1/2/W is reported. The detector is fabricated using silicon microfabrication techniques and integrates a thermoelectric readout with a resonant optical cavity to achieve wavelength selective absorption.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2013 International Conference on Optical MEMS and Nanophotonics (OMN)

自引率

0.00%

发文量