{"title":"室温下高探测率的谐振腔耦合红外探测器","authors":"A. Gawarikar, R. Shea, J. Talghader","doi":"10.1109/OMN.2013.6659057","DOIUrl":null,"url":null,"abstract":"A spectrally selective uncooled long wave infrared detector with peak detectivity between 3×10<sup>9</sup> cm Hz<sup>1/2</sup>/W and 4.4×10<sup>9</sup> cm Hz<sup>1/2</sup>/W is reported. The detector is fabricated using silicon microfabrication techniques and integrates a thermoelectric readout with a resonant optical cavity to achieve wavelength selective absorption.","PeriodicalId":6334,"journal":{"name":"2013 International Conference on Optical MEMS and Nanophotonics (OMN)","volume":"25 1","pages":"57-58"},"PeriodicalIF":0.0000,"publicationDate":"2013-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Resonant cavity coupled infrared detectors with high detectivity operating at room temperature\",\"authors\":\"A. Gawarikar, R. Shea, J. Talghader\",\"doi\":\"10.1109/OMN.2013.6659057\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A spectrally selective uncooled long wave infrared detector with peak detectivity between 3×10<sup>9</sup> cm Hz<sup>1/2</sup>/W and 4.4×10<sup>9</sup> cm Hz<sup>1/2</sup>/W is reported. The detector is fabricated using silicon microfabrication techniques and integrates a thermoelectric readout with a resonant optical cavity to achieve wavelength selective absorption.\",\"PeriodicalId\":6334,\"journal\":{\"name\":\"2013 International Conference on Optical MEMS and Nanophotonics (OMN)\",\"volume\":\"25 1\",\"pages\":\"57-58\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-11-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 International Conference on Optical MEMS and Nanophotonics (OMN)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/OMN.2013.6659057\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 International Conference on Optical MEMS and Nanophotonics (OMN)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/OMN.2013.6659057","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
摘要
报道了一种峰检出率在3×109 cm Hz1/2/W ~ 4.4×109 cm Hz1/2/W之间的光谱选择性非冷却长波红外探测器。该探测器采用硅微加工技术制造,并将热电读出器与谐振光学腔集成在一起,以实现波长选择性吸收。
Resonant cavity coupled infrared detectors with high detectivity operating at room temperature
A spectrally selective uncooled long wave infrared detector with peak detectivity between 3×109 cm Hz1/2/W and 4.4×109 cm Hz1/2/W is reported. The detector is fabricated using silicon microfabrication techniques and integrates a thermoelectric readout with a resonant optical cavity to achieve wavelength selective absorption.