Adedotun Adeyemo, Xiaohan Yang, Anu Bala, J. Mathew, A. Jabir
{"title":"横杆读取操作的解析模型","authors":"Adedotun Adeyemo, Xiaohan Yang, Anu Bala, J. Mathew, A. Jabir","doi":"10.1109/IOLTS.2016.7604657","DOIUrl":null,"url":null,"abstract":"Resistive memories have simpler structures and are capable of producing highly dense memory through crossbar architecture without the use of access devices. Reliability however remains a problem of resistive memories especially in its basic read operation. This paper presents a comprehensive model for resistive devices in crossbar array as well as models for four crossbar read schemes. These models are non-restrictive and are suitable for accurate analytical analysis of crossbar arrays and the evaluation of their performance during read operation.","PeriodicalId":6580,"journal":{"name":"2016 IEEE 22nd International Symposium on On-Line Testing and Robust System Design (IOLTS)","volume":"94 1","pages":"3-4"},"PeriodicalIF":0.0000,"publicationDate":"2016-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Analytic models for crossbar read operation\",\"authors\":\"Adedotun Adeyemo, Xiaohan Yang, Anu Bala, J. Mathew, A. Jabir\",\"doi\":\"10.1109/IOLTS.2016.7604657\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Resistive memories have simpler structures and are capable of producing highly dense memory through crossbar architecture without the use of access devices. Reliability however remains a problem of resistive memories especially in its basic read operation. This paper presents a comprehensive model for resistive devices in crossbar array as well as models for four crossbar read schemes. These models are non-restrictive and are suitable for accurate analytical analysis of crossbar arrays and the evaluation of their performance during read operation.\",\"PeriodicalId\":6580,\"journal\":{\"name\":\"2016 IEEE 22nd International Symposium on On-Line Testing and Robust System Design (IOLTS)\",\"volume\":\"94 1\",\"pages\":\"3-4\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-07-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE 22nd International Symposium on On-Line Testing and Robust System Design (IOLTS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IOLTS.2016.7604657\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE 22nd International Symposium on On-Line Testing and Robust System Design (IOLTS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IOLTS.2016.7604657","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Resistive memories have simpler structures and are capable of producing highly dense memory through crossbar architecture without the use of access devices. Reliability however remains a problem of resistive memories especially in its basic read operation. This paper presents a comprehensive model for resistive devices in crossbar array as well as models for four crossbar read schemes. These models are non-restrictive and are suitable for accurate analytical analysis of crossbar arrays and the evaluation of their performance during read operation.
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