杂化结构中电场驱动的畴壁转移

Xiaopeng Duan, V. Stephanovich, Y. Semenov, H. Fangohr, M. Franchin, K. W. Kim
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引用次数: 0

摘要

利用Gr电子与FMI层之间的交换相互作用,首次证明了电场控制DW运动的可行性。设计并建模了器件原型。结果表明,在DW上产生了10-100 Oe的有效磁场,导致速度约为30 m/s。在这种情况下,工作频率预计为0.5-1 GHz,作为双态存储器。不存在有源电流,等效电路模型是一组电容器。因此,实现了低能耗,约10- 16j /开关。
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Electric field driven domain wall transfer in hybrid structures
We proved for the first time the feasibility of the DW motion control by electric field using the exchange interaction between Gr electrons and the FMI layer. A device prototype is designed and modeled. It is shown an effective magnetic field at 10-100 Oe is generated upon the DW, which leads to a velocity around 30 m/s. 0.5-1 GHz operating frequency is expected in this condition as a bi-state memory. No active current is present and the equivalent circuit model is a set of capacitors. Therefore, low energy consumption is achieved, about 10-16 J/switch.
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