Xiaopeng Duan, V. Stephanovich, Y. Semenov, H. Fangohr, M. Franchin, K. W. Kim
{"title":"杂化结构中电场驱动的畴壁转移","authors":"Xiaopeng Duan, V. Stephanovich, Y. Semenov, H. Fangohr, M. Franchin, K. W. Kim","doi":"10.1109/DRC.2012.6256982","DOIUrl":null,"url":null,"abstract":"We proved for the first time the feasibility of the DW motion control by electric field using the exchange interaction between Gr electrons and the FMI layer. A device prototype is designed and modeled. It is shown an effective magnetic field at 10-100 Oe is generated upon the DW, which leads to a velocity around 30 m/s. 0.5-1 GHz operating frequency is expected in this condition as a bi-state memory. No active current is present and the equivalent circuit model is a set of capacitors. Therefore, low energy consumption is achieved, about 10-16 J/switch.","PeriodicalId":6808,"journal":{"name":"70th Device Research Conference","volume":"1 1","pages":"121-122"},"PeriodicalIF":0.0000,"publicationDate":"2012-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Electric field driven domain wall transfer in hybrid structures\",\"authors\":\"Xiaopeng Duan, V. Stephanovich, Y. Semenov, H. Fangohr, M. Franchin, K. W. Kim\",\"doi\":\"10.1109/DRC.2012.6256982\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We proved for the first time the feasibility of the DW motion control by electric field using the exchange interaction between Gr electrons and the FMI layer. A device prototype is designed and modeled. It is shown an effective magnetic field at 10-100 Oe is generated upon the DW, which leads to a velocity around 30 m/s. 0.5-1 GHz operating frequency is expected in this condition as a bi-state memory. No active current is present and the equivalent circuit model is a set of capacitors. Therefore, low energy consumption is achieved, about 10-16 J/switch.\",\"PeriodicalId\":6808,\"journal\":{\"name\":\"70th Device Research Conference\",\"volume\":\"1 1\",\"pages\":\"121-122\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-06-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"70th Device Research Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DRC.2012.6256982\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"70th Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2012.6256982","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Electric field driven domain wall transfer in hybrid structures
We proved for the first time the feasibility of the DW motion control by electric field using the exchange interaction between Gr electrons and the FMI layer. A device prototype is designed and modeled. It is shown an effective magnetic field at 10-100 Oe is generated upon the DW, which leads to a velocity around 30 m/s. 0.5-1 GHz operating frequency is expected in this condition as a bi-state memory. No active current is present and the equivalent circuit model is a set of capacitors. Therefore, low energy consumption is achieved, about 10-16 J/switch.