{"title":"一个非常可靠的多电平YSZ电阻开关存储器","authors":"Feng Pan, Jaewon Jang, V. Subramanian","doi":"10.1109/DRC.2012.6257024","DOIUrl":null,"url":null,"abstract":"We demonstrate an excellent Resistive Random Access Memory (RRAM) device based on Yttria Stabilized Zirconia (YSZ). Robust multilevel operation is achieved using incremental step pulse programming. Using this scheme, we realize excellent reliability, and further, demonstrate that oxygen vacancy-based cells are superior to metallic filament cells for multilevel operation.","PeriodicalId":6808,"journal":{"name":"70th Device Research Conference","volume":"1 1","pages":"217-218"},"PeriodicalIF":0.0000,"publicationDate":"2012-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"A very reliable multilevel YSZ resistive switching memory\",\"authors\":\"Feng Pan, Jaewon Jang, V. Subramanian\",\"doi\":\"10.1109/DRC.2012.6257024\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We demonstrate an excellent Resistive Random Access Memory (RRAM) device based on Yttria Stabilized Zirconia (YSZ). Robust multilevel operation is achieved using incremental step pulse programming. Using this scheme, we realize excellent reliability, and further, demonstrate that oxygen vacancy-based cells are superior to metallic filament cells for multilevel operation.\",\"PeriodicalId\":6808,\"journal\":{\"name\":\"70th Device Research Conference\",\"volume\":\"1 1\",\"pages\":\"217-218\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-06-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"70th Device Research Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DRC.2012.6257024\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"70th Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2012.6257024","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A very reliable multilevel YSZ resistive switching memory
We demonstrate an excellent Resistive Random Access Memory (RRAM) device based on Yttria Stabilized Zirconia (YSZ). Robust multilevel operation is achieved using incremental step pulse programming. Using this scheme, we realize excellent reliability, and further, demonstrate that oxygen vacancy-based cells are superior to metallic filament cells for multilevel operation.
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