{"title":"n型和p型掺铁InP的lec生长和表征","authors":"F. Mosel, A. Seidl, D. Hofmann, G. Muller","doi":"10.1109/ICIPRM.1991.147365","DOIUrl":null,"url":null,"abstract":"The growth of n- and p-type Fe doped InP crystals using the liquid encapsulated Czochralski (LEC) technique by means of co-doping with Zn and Te, respectively, is discussed. The incorporation of the dopants was examined by chemical, electrical and optical analysis. The electronic transport properties of the InP:Fe,Zn crystals are investigated by comparing Hall effect measurements and theoretical calculations indicating a partial compensation of the Zn atoms by a deep donor.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"8 1","pages":"331-334"},"PeriodicalIF":0.0000,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"LEC-growth and characterization of n- and p-type Fe-doped InP\",\"authors\":\"F. Mosel, A. Seidl, D. Hofmann, G. Muller\",\"doi\":\"10.1109/ICIPRM.1991.147365\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The growth of n- and p-type Fe doped InP crystals using the liquid encapsulated Czochralski (LEC) technique by means of co-doping with Zn and Te, respectively, is discussed. The incorporation of the dopants was examined by chemical, electrical and optical analysis. The electronic transport properties of the InP:Fe,Zn crystals are investigated by comparing Hall effect measurements and theoretical calculations indicating a partial compensation of the Zn atoms by a deep donor.<<ETX>>\",\"PeriodicalId\":6444,\"journal\":{\"name\":\"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials\",\"volume\":\"8 1\",\"pages\":\"331-334\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1991-04-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1991.147365\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1991.147365","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
LEC-growth and characterization of n- and p-type Fe-doped InP
The growth of n- and p-type Fe doped InP crystals using the liquid encapsulated Czochralski (LEC) technique by means of co-doping with Zn and Te, respectively, is discussed. The incorporation of the dopants was examined by chemical, electrical and optical analysis. The electronic transport properties of the InP:Fe,Zn crystals are investigated by comparing Hall effect measurements and theoretical calculations indicating a partial compensation of the Zn atoms by a deep donor.<>
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