碳纳米管中各种金属电极的肖特基势垒工程

2007 7th IEEE Conference on Nanotechnology (IEEE NANO) Pub Date : 2007-08-01 DOI:10.1109/NANO.2007.4601168

D. Perello, M. Kim, D. Cha, G. Han, D. Bae, S. Jeong, Y. H. Lee, M. Yun

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引用次数: 3

摘要

我们研究了利用半导体单壁碳纳米管(SWCNTs)的碳纳米管场效应晶体管(CNT FET)。在长(~11微米)swcnts上制备了多个器件，每个器件具有不同的金属源极和漏极触点。在室温下观察到大约4兆欧米伽的大接触电阻。低温测量对这些相同的器件产生不同的接触电阻。器件的输运特性符合Schottky接触和Poole-Frenkel模型，具有测量到的25-41 meV势垒。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Schottky barrier engineering in carbon nanotube with various metal electrodes

We investigated carbon nanotube field effect transistors (CNT FET) utilizing semiconducting single-walled carbon nanotubes (SWCNTs). Multiple devices, each of different metal source and drain contacts, were fabricated on long (~11 micron) SWCNT. Large contact resistances around four MOmega were observed at room temperature. Low temperature measurements yielded varying contact resistances for these same devices. Transport properties of the devices follow to the Schottky contact and Poole-Frenkel model with measured 25-41 meV barriers for the devices.

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2007 7th IEEE Conference on Nanotechnology (IEEE NANO)

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