A. Tabata, T. Benyattou, G. Guillot, Z. Sobiesierski, S. Clark, R. Williams, M. Gendry, G. Hollinger, P. Viktorovitch
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Surface InAs/InP quantum wells: epitaxial growth and characterization
The epitaxial growth and characterization of InAs surface quantum wells grown on InP by molecular beam epitaxy (MBE) are discussed. The structural properties of the InAs layers are described. Photoluminescence results are presented. This system shows practically no coupling between the confined states in the InAs quantum well and the InAs surface states.<>
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