{"title":"工作带宽> 415nm的全硅片上偏光片","authors":"Weixi Liu, D. Dai, Yaocheng Shi","doi":"10.1109/ICOCN53177.2021.9563697","DOIUrl":null,"url":null,"abstract":"We proposed and demonstrated an all-silicon TM polarizer by introducing double-slot Euler bending on 340-nm SOI with experimental excess loss < 1 dB and polarization extinction ratio> 25 dB over> 415-nm working bandwidth.","PeriodicalId":6756,"journal":{"name":"2021 19th International Conference on Optical Communications and Networks (ICOCN)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2021-08-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"All-Silicon On-Chip Polarizer with> 415 nm working bandwidth\",\"authors\":\"Weixi Liu, D. Dai, Yaocheng Shi\",\"doi\":\"10.1109/ICOCN53177.2021.9563697\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We proposed and demonstrated an all-silicon TM polarizer by introducing double-slot Euler bending on 340-nm SOI with experimental excess loss < 1 dB and polarization extinction ratio> 25 dB over> 415-nm working bandwidth.\",\"PeriodicalId\":6756,\"journal\":{\"name\":\"2021 19th International Conference on Optical Communications and Networks (ICOCN)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-08-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 19th International Conference on Optical Communications and Networks (ICOCN)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICOCN53177.2021.9563697\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 19th International Conference on Optical Communications and Networks (ICOCN)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICOCN53177.2021.9563697","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
All-Silicon On-Chip Polarizer with> 415 nm working bandwidth
We proposed and demonstrated an all-silicon TM polarizer by introducing double-slot Euler bending on 340-nm SOI with experimental excess loss < 1 dB and polarization extinction ratio> 25 dB over> 415-nm working bandwidth.
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