Zongjie Shen, Chun Zhao, I. Mitrovic, Cezhou Zhao, Yina Liu, Li Yang
{"title":"溶液加工MO/ 2d材料堆叠开关层忆阻器的阻性开关性能","authors":"Zongjie Shen, Chun Zhao, I. Mitrovic, Cezhou Zhao, Yina Liu, Li Yang","doi":"10.1109/ICICDT51558.2021.9626507","DOIUrl":null,"url":null,"abstract":"In this work, the RRAM device with the structure of Ag/AlOx/MXene/ITO was fabricated with the stacked solution-processed switching layers. The device operated with a low voltage around ~2.0 V and exhibited a stable ON/OFF ratio larger than 104. Apart from excellent stability with endurance cycles of more than 100 and retention time of longer than 104 s, typical synaptic behaviors including long-term potentiation and depression (LTP/LTD) were also obtained, which had a positive influence on the following pattern recognition process and the average value of the recognition was around ~90%.","PeriodicalId":6737,"journal":{"name":"2021 International Conference on IC Design and Technology (ICICDT)","volume":"24 1","pages":"1-4"},"PeriodicalIF":0.0000,"publicationDate":"2021-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Resistive switching performance of memristor with solution-processed stacked MO/2D-materials switching layers\",\"authors\":\"Zongjie Shen, Chun Zhao, I. Mitrovic, Cezhou Zhao, Yina Liu, Li Yang\",\"doi\":\"10.1109/ICICDT51558.2021.9626507\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work, the RRAM device with the structure of Ag/AlOx/MXene/ITO was fabricated with the stacked solution-processed switching layers. The device operated with a low voltage around ~2.0 V and exhibited a stable ON/OFF ratio larger than 104. Apart from excellent stability with endurance cycles of more than 100 and retention time of longer than 104 s, typical synaptic behaviors including long-term potentiation and depression (LTP/LTD) were also obtained, which had a positive influence on the following pattern recognition process and the average value of the recognition was around ~90%.\",\"PeriodicalId\":6737,\"journal\":{\"name\":\"2021 International Conference on IC Design and Technology (ICICDT)\",\"volume\":\"24 1\",\"pages\":\"1-4\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-09-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 International Conference on IC Design and Technology (ICICDT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICICDT51558.2021.9626507\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 International Conference on IC Design and Technology (ICICDT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICICDT51558.2021.9626507","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Resistive switching performance of memristor with solution-processed stacked MO/2D-materials switching layers
In this work, the RRAM device with the structure of Ag/AlOx/MXene/ITO was fabricated with the stacked solution-processed switching layers. The device operated with a low voltage around ~2.0 V and exhibited a stable ON/OFF ratio larger than 104. Apart from excellent stability with endurance cycles of more than 100 and retention time of longer than 104 s, typical synaptic behaviors including long-term potentiation and depression (LTP/LTD) were also obtained, which had a positive influence on the following pattern recognition process and the average value of the recognition was around ~90%.
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