Vivek Raghuwanshi, Deepak Bharti, A. Mahato, Ishan Varun, S. P. Tiwari
{"title":"tips -并五苯:聚苯乙烯共混比对溶液加工有机场效应晶体管电性能和稳定性的影响","authors":"Vivek Raghuwanshi, Deepak Bharti, A. Mahato, Ishan Varun, S. P. Tiwari","doi":"10.1109/icee44586.2018.8937941","DOIUrl":null,"url":null,"abstract":"We report the effect of varying the semiconductor:polymer blend ratio on the electrical performance and bias-stress stability of the organic field effect transistors (OFETs) with TIPS-Pentacene and polystyrene as semiconductor and polymer combination. Device performance was found to improve with increasing polymer content in the solution. Devices with 1:3 TIPS-Pentacene:polystyrene blend outperformed the other counterparts with high performance, and demonstrated least performance variation with regular 100 transfer measurement cycles. In addition, 1:3 blend devices have shown the least normalized drain current decay of $\\sim$ 8.5 % with the bias stress condition of VDS = VGS = -30 V for 2 h, as compared to the 1:1, 3:1 and neat devices with the decay of 15 %, 37 % and 71 % respectively. Additionally, a better recovery of electrical characteristics was observed in blend devices with larger polymer fractions from the deteriorating effects of gate bias stress.","PeriodicalId":6590,"journal":{"name":"2018 4th IEEE International Conference on Emerging Electronics (ICEE)","volume":"114 1","pages":"1-4"},"PeriodicalIF":0.0000,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Effect of TIPS-Pentacene:Polystyrene Blend Ratio on Electrical Performance and Stability of Solution Processed Organic Field-Effect Transistors\",\"authors\":\"Vivek Raghuwanshi, Deepak Bharti, A. Mahato, Ishan Varun, S. P. Tiwari\",\"doi\":\"10.1109/icee44586.2018.8937941\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report the effect of varying the semiconductor:polymer blend ratio on the electrical performance and bias-stress stability of the organic field effect transistors (OFETs) with TIPS-Pentacene and polystyrene as semiconductor and polymer combination. Device performance was found to improve with increasing polymer content in the solution. Devices with 1:3 TIPS-Pentacene:polystyrene blend outperformed the other counterparts with high performance, and demonstrated least performance variation with regular 100 transfer measurement cycles. In addition, 1:3 blend devices have shown the least normalized drain current decay of $\\\\sim$ 8.5 % with the bias stress condition of VDS = VGS = -30 V for 2 h, as compared to the 1:1, 3:1 and neat devices with the decay of 15 %, 37 % and 71 % respectively. Additionally, a better recovery of electrical characteristics was observed in blend devices with larger polymer fractions from the deteriorating effects of gate bias stress.\",\"PeriodicalId\":6590,\"journal\":{\"name\":\"2018 4th IEEE International Conference on Emerging Electronics (ICEE)\",\"volume\":\"114 1\",\"pages\":\"1-4\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 4th IEEE International Conference on Emerging Electronics (ICEE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/icee44586.2018.8937941\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 4th IEEE International Conference on Emerging Electronics (ICEE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/icee44586.2018.8937941","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Effect of TIPS-Pentacene:Polystyrene Blend Ratio on Electrical Performance and Stability of Solution Processed Organic Field-Effect Transistors
We report the effect of varying the semiconductor:polymer blend ratio on the electrical performance and bias-stress stability of the organic field effect transistors (OFETs) with TIPS-Pentacene and polystyrene as semiconductor and polymer combination. Device performance was found to improve with increasing polymer content in the solution. Devices with 1:3 TIPS-Pentacene:polystyrene blend outperformed the other counterparts with high performance, and demonstrated least performance variation with regular 100 transfer measurement cycles. In addition, 1:3 blend devices have shown the least normalized drain current decay of $\sim$ 8.5 % with the bias stress condition of VDS = VGS = -30 V for 2 h, as compared to the 1:1, 3:1 and neat devices with the decay of 15 %, 37 % and 71 % respectively. Additionally, a better recovery of electrical characteristics was observed in blend devices with larger polymer fractions from the deteriorating effects of gate bias stress.