tips -并五苯:聚苯乙烯共混比对溶液加工有机场效应晶体管电性能和稳定性的影响

Vivek Raghuwanshi, Deepak Bharti, A. Mahato, Ishan Varun, S. P. Tiwari
{"title":"tips -并五苯:聚苯乙烯共混比对溶液加工有机场效应晶体管电性能和稳定性的影响","authors":"Vivek Raghuwanshi, Deepak Bharti, A. Mahato, Ishan Varun, S. P. Tiwari","doi":"10.1109/icee44586.2018.8937941","DOIUrl":null,"url":null,"abstract":"We report the effect of varying the semiconductor:polymer blend ratio on the electrical performance and bias-stress stability of the organic field effect transistors (OFETs) with TIPS-Pentacene and polystyrene as semiconductor and polymer combination. Device performance was found to improve with increasing polymer content in the solution. Devices with 1:3 TIPS-Pentacene:polystyrene blend outperformed the other counterparts with high performance, and demonstrated least performance variation with regular 100 transfer measurement cycles. In addition, 1:3 blend devices have shown the least normalized drain current decay of $\\sim$ 8.5 % with the bias stress condition of VDS = VGS = -30 V for 2 h, as compared to the 1:1, 3:1 and neat devices with the decay of 15 %, 37 % and 71 % respectively. Additionally, a better recovery of electrical characteristics was observed in blend devices with larger polymer fractions from the deteriorating effects of gate bias stress.","PeriodicalId":6590,"journal":{"name":"2018 4th IEEE International Conference on Emerging Electronics (ICEE)","volume":"114 1","pages":"1-4"},"PeriodicalIF":0.0000,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Effect of TIPS-Pentacene:Polystyrene Blend Ratio on Electrical Performance and Stability of Solution Processed Organic Field-Effect Transistors\",\"authors\":\"Vivek Raghuwanshi, Deepak Bharti, A. Mahato, Ishan Varun, S. P. Tiwari\",\"doi\":\"10.1109/icee44586.2018.8937941\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report the effect of varying the semiconductor:polymer blend ratio on the electrical performance and bias-stress stability of the organic field effect transistors (OFETs) with TIPS-Pentacene and polystyrene as semiconductor and polymer combination. Device performance was found to improve with increasing polymer content in the solution. Devices with 1:3 TIPS-Pentacene:polystyrene blend outperformed the other counterparts with high performance, and demonstrated least performance variation with regular 100 transfer measurement cycles. In addition, 1:3 blend devices have shown the least normalized drain current decay of $\\\\sim$ 8.5 % with the bias stress condition of VDS = VGS = -30 V for 2 h, as compared to the 1:1, 3:1 and neat devices with the decay of 15 %, 37 % and 71 % respectively. Additionally, a better recovery of electrical characteristics was observed in blend devices with larger polymer fractions from the deteriorating effects of gate bias stress.\",\"PeriodicalId\":6590,\"journal\":{\"name\":\"2018 4th IEEE International Conference on Emerging Electronics (ICEE)\",\"volume\":\"114 1\",\"pages\":\"1-4\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 4th IEEE International Conference on Emerging Electronics (ICEE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/icee44586.2018.8937941\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 4th IEEE International Conference on Emerging Electronics (ICEE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/icee44586.2018.8937941","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

本文报道了半导体与聚合物混合比例对以TIPS-Pentacene和聚苯乙烯为半导体和聚合物组合的有机场效应晶体管(ofet)电性能和偏置应力稳定性的影响。随着溶液中聚合物含量的增加,器件性能得到改善。1:3 TIPS-Pentacene:聚苯乙烯共混物的设备性能优于其他同类产品,并且在常规100次转移测量循环中表现出最小的性能变化。此外,在VDS = VGS = -30 V的偏置应力条件下,1:3混合器件的归一化漏极电流衰减最小,为8.5%,而1:1、3:1和纯混合器件的归一化漏极电流衰减分别为15%、37%和71%。此外,在栅极偏置应力恶化的影响下,观察到具有较大聚合物组分的混合器件的电特性得到了更好的恢复。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Effect of TIPS-Pentacene:Polystyrene Blend Ratio on Electrical Performance and Stability of Solution Processed Organic Field-Effect Transistors
We report the effect of varying the semiconductor:polymer blend ratio on the electrical performance and bias-stress stability of the organic field effect transistors (OFETs) with TIPS-Pentacene and polystyrene as semiconductor and polymer combination. Device performance was found to improve with increasing polymer content in the solution. Devices with 1:3 TIPS-Pentacene:polystyrene blend outperformed the other counterparts with high performance, and demonstrated least performance variation with regular 100 transfer measurement cycles. In addition, 1:3 blend devices have shown the least normalized drain current decay of $\sim$ 8.5 % with the bias stress condition of VDS = VGS = -30 V for 2 h, as compared to the 1:1, 3:1 and neat devices with the decay of 15 %, 37 % and 71 % respectively. Additionally, a better recovery of electrical characteristics was observed in blend devices with larger polymer fractions from the deteriorating effects of gate bias stress.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Comprehensive Computational Modelling Approach for Graphene FETs Thermoelectric Properties of CrI3 Monolayer A Simple Charge and Capacitance Compact Model for Asymmetric III-V DGFETs Using CCDA Selective dewetting of metal films for fabrication of atomically separated nanoplasmonic dimers SIMS characterization of TiN diffusion barrier layer on steel substrate
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1