Ching-I Li, G. Lin, Rekha Padmanabhan, G. N. Cai, Z. Wan, W. Platow, K. Saadatmand, Po-Heng Lin, Chih-Ming Tai, R. Chang
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Integrated divergent beam for FinFET Conformal Doping
In order to achieve high performance finFET devices, it is important to achieve a high concentration and conformal doping within the Fin. In this paper, a solution for conformal finFET doping method is demonstrated. We present a novel implantation condition called Integrated Divergent Beam (IDB) that consists of various implant angle distribution. We perform the IDB Arsenic implantation by Monte-Carlo simulation.
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