三维ZnO纳米线光电探测器

2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO) Pub Date : 2016-11-21 DOI:10.1109/NANO.2016.7751326

C. Lu, Y. H. Chen, S. J. Chang, T. Hsueh

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引用次数: 0

摘要

采用三维通硅孔(TSV)技术制备了zno纳米线光电探测器。Si孔直径约80 μm，深度约175 μm。Cu均匀填充在各TSV中，其平均电阻约为1 mΩ。在330nm紫外光照射下，在8v偏置下测得的三维TSV ZnO纳米线光电探测器的响应率为7.38×10-3 A/W。此外，在施加8 V偏压的情况下，三维TSV ZnO纳米线光电探测器的抑制比约为170。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A three-dimensional ZnO nanowires photodetector

A ZnO-nanowire photodetector was prepared using three-dimensional through silicon via (TSV) technology. The diameter and depth of the Si via were about 80 μm and 175 μm, respectively. Cu uniformly filled in each TSV, whose average resistance was about 1 mΩ. Upon illumination with UV light (= 330 nm), it was found that measured responsivities is 7.38×10-3 A/W for the 3D TSV ZnO nanowire photodetector biased at 8 V. Furthermore, a rejection ratio of approximately 170 was obtained for the 3D TSV ZnO nanowire photodetector with an applied bias of 8 V.

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2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO)

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