Zhongjian Wang, Xinhong Cheng, C. Xia, Dawei Xu, Lingyan Shen, D. Cao, Li Zheng, Qian Wang, Yu Yuehui
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Total ionizing dose effects in high breakdown voltage SOI devices
In this paper, 600V LDMOS and LIGBT on thin SOI with improved field oxide (FOX) were fabricated. The dependence of the off-state breakdown voltage on the implant dose in the drift region and the on-state characteristics were measured. Total ionizing dose (TID) effects on LDMOS and LIGBT were studied experimentally. The threshold voltage shift and leakage current induced by 60Co gamma irradiation under different dose and bias conditions were compared.
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