用镧锶钴氧化物电极压印铁电PLZT薄膜电容器

Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics Pub Date : 1994-08-07 DOI:10.1109/ISAF.1994.522299

J. Benedetto, M. Roush, I. Lloyd, R. Ramesh

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引用次数: 6

摘要

在采用镧锶钴氧化物上下电极的PLZT薄膜电容器上测量了铁电压印。数据显示，在温度升高和交变(单极)电压应力的联合作用下，印痕显著增加。在没有外部偏压的温度应力样品上没有观察到印记。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Imprint of ferroelectric PLZT thin-film capacitors with lanthanum strontium cobalt oxide electrodes

The ferroelectric imprint is measured on thin-film PLZT capacitors with lanthanum strontium cobalt oxide top and bottom electrodes. The data show a significant amount of imprint with a combined elevated temperature and alternating (unipolar) voltage stress. No imprint was observed on samples that were temperature stressed without external bias.

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Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics

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