电光应用中BaTiO3在Si上外延集成

Wei-lian Guo, A. Posadas, A. Demkov
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引用次数: 21

摘要

BaTiO3 (BTO)是一种非常有前途的材料,用于制造电光(EO)调制器,因为材料的有效波克尔斯系数大,特别是在外延形式下。它还具有通过SrTiO3模板轻松集成在Si材料平台上的额外好处。这两个特点使外延BTO成为下一代硅光子学应用的理想选择。作为铁电晶体,BTO具有铁电极化指向的独特晶体学方向。对于EO调制器,由于极化方向控制着光与外电场之间的耦合,因此了解不同的生长方法和后续处理如何影响铁电极化方向非常重要。某些电光器件可能要求偏振在薄膜的平面内(平面内开关液晶器件),而其他应用可能要求它垂直于薄膜的平面(马赫-曾德调制器)。本文综述了利用分子束外延、脉冲激光沉积和射频溅射等多种沉积方法在Si上生长外延BTO的研究进展。我们根据报道的表征结果总结了所得的BTO薄膜结构和质量。我们还讨论了由该材料平台制成的基本设备的EO测量,这些数据是可用的。
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Epitaxial integration of BaTiO3 on Si for electro-optic applications
BaTiO3 (BTO) is a highly promising material for the fabrication of electro-optic (EO) modulators due to the large effective Pockels coefficient of the material, particularly in an epitaxial form. It also has the added benefit of being readily integrated on a Si material platform via a SrTiO3 template. These two characteristics make epitaxial BTO ideal for use in next generation silicon photonics applications. Being a ferroelectric, BTO has a unique crystallographic direction in which the ferroelectric polarization points. For EO modulators, because the polarization direction controls the coupling between light and an external electric field, it is important to understand how different growth methods and subsequent processing affect the direction of the ferroelectric polarization. Certain electro-optic devices may require polarization to be in the plane of the film (in-plane switching liquid crystal devices), while other applications may require it to be normal to the plane of the film (Mach–Zehnder modulator). Here, we review the growth of epitaxial BTO on Si by a variety of deposition methods including molecular beam epitaxy, pulsed laser deposition, and RF sputtering. We summarize the resulting BTO film structure and quality based on the reported characterization results. We also discuss EO measurements of basic devices made from this material platform where such data are available.
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