R. Vernydub, O. Kyrylenko, O. Konoreva, Y. Olikh, O. Radkevych, D. Stratilat, V. Tartachnyk
{"title":"电子辐照GaP led的场效应","authors":"R. Vernydub, O. Kyrylenko, O. Konoreva, Y. Olikh, O. Radkevych, D. Stratilat, V. Tartachnyk","doi":"10.15407/spqeo25.02.179","DOIUrl":null,"url":null,"abstract":"The paper presents the results of the study of field effects in non-irradiated and irradiated by electrons (E = 2 MeV, F = 8.2∙1016 cm–2) gallium phosphide (GaP) light emitting diodes (LEDs) under reverse bias. The avalanche multiplication of charge carriers and tunneling breakdown in the space charge region has been considered. An increase of breakdown voltage after electron irradiation has been revealed. The effects of the annealing of non-irradiated and irradiated diodes in the temperature range of 20 to 500 °C have been analyzed.","PeriodicalId":21598,"journal":{"name":"Semiconductor physics, quantum electronics and optoelectronics","volume":"106 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2022-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Field effects in electron-irradiated GaP LEDs\",\"authors\":\"R. Vernydub, O. Kyrylenko, O. Konoreva, Y. Olikh, O. Radkevych, D. Stratilat, V. Tartachnyk\",\"doi\":\"10.15407/spqeo25.02.179\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The paper presents the results of the study of field effects in non-irradiated and irradiated by electrons (E = 2 MeV, F = 8.2∙1016 cm–2) gallium phosphide (GaP) light emitting diodes (LEDs) under reverse bias. The avalanche multiplication of charge carriers and tunneling breakdown in the space charge region has been considered. An increase of breakdown voltage after electron irradiation has been revealed. The effects of the annealing of non-irradiated and irradiated diodes in the temperature range of 20 to 500 °C have been analyzed.\",\"PeriodicalId\":21598,\"journal\":{\"name\":\"Semiconductor physics, quantum electronics and optoelectronics\",\"volume\":\"106 1\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-06-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Semiconductor physics, quantum electronics and optoelectronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.15407/spqeo25.02.179\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Semiconductor physics, quantum electronics and optoelectronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.15407/spqeo25.02.179","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
摘要
本文介绍了反向偏压下未辐照和受电子(E = 2 MeV, F = 8.2∙1016 cm-2)照射的磷化镓(GaP)发光二极管(led)的场效应研究结果。考虑了空间电荷区载流子的雪崩倍增和隧穿击穿。发现电子辐照后击穿电压升高。分析了未辐照和辐照二极管在20 ~ 500℃温度范围内退火的影响。
The paper presents the results of the study of field effects in non-irradiated and irradiated by electrons (E = 2 MeV, F = 8.2∙1016 cm–2) gallium phosphide (GaP) light emitting diodes (LEDs) under reverse bias. The avalanche multiplication of charge carriers and tunneling breakdown in the space charge region has been considered. An increase of breakdown voltage after electron irradiation has been revealed. The effects of the annealing of non-irradiated and irradiated diodes in the temperature range of 20 to 500 °C have been analyzed.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
