{"title":"用于节能系统的宽带隙半导体功率器件","authors":"T. Chow","doi":"10.1109/WIPDA.2015.7369328","DOIUrl":null,"url":null,"abstract":"We review the vertical and lateral SiC and GaN power transistor types and structures explored and commercialized for advanced energy efficient systems. We have quantitatively evaluated the on-state performance of these power devices in the voltage rating range from 30-10kV. Based on these performance projections and technology development trends, we feel that this emerging class of power devices will become an important and indispensable component technology.","PeriodicalId":6538,"journal":{"name":"2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"16 1","pages":"402-405"},"PeriodicalIF":0.0000,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"69","resultStr":"{\"title\":\"Wide bandgap semiconductor power devices for energy efficient systems\",\"authors\":\"T. Chow\",\"doi\":\"10.1109/WIPDA.2015.7369328\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We review the vertical and lateral SiC and GaN power transistor types and structures explored and commercialized for advanced energy efficient systems. We have quantitatively evaluated the on-state performance of these power devices in the voltage rating range from 30-10kV. Based on these performance projections and technology development trends, we feel that this emerging class of power devices will become an important and indispensable component technology.\",\"PeriodicalId\":6538,\"journal\":{\"name\":\"2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)\",\"volume\":\"16 1\",\"pages\":\"402-405\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"69\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/WIPDA.2015.7369328\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WIPDA.2015.7369328","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Wide bandgap semiconductor power devices for energy efficient systems
We review the vertical and lateral SiC and GaN power transistor types and structures explored and commercialized for advanced energy efficient systems. We have quantitatively evaluated the on-state performance of these power devices in the voltage rating range from 30-10kV. Based on these performance projections and technology development trends, we feel that this emerging class of power devices will become an important and indispensable component technology.
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