用于下一代磁性数据存储应用的纳米级位图形介质

D. Litvinov, V. Parekh, E. Chunsheng, D. Smith, J. Rantschler, P. Ruchhoeft, D. Weller, S. Khizroev
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引用次数: 1

摘要

介绍了位图型磁记录介质的设计思想和制作方法。评价了离子束近距离印刷技术在介质制版中的应用,这是一种高通量直写光刻技术。分析了超高磁各向异性(Co/Pd)N磁性多层膜作为图像化记录层的候选材料。经过图形化处理,优化后的多层材料的矫顽力值远远超过14kOe。结果表明,磁化反转是通过畴壁成核和畴壁扩展实现的。成核场和成核位置强烈依赖于钻头边缘缺陷,并有助于有限开关场分布。利用互易理论分析了不同磁读写器设计的位图形介质的回放。
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Nanoscale bit-patterned media for next generation magnetic data storage applications
Design considerations and fabrication of bit-patterned magnetic recording media are presented. The application of ion-beam proximity printing, a high-throughput direct-write lithography, to media patterning is evaluated. Ultra-high magnetic anisotropy (Co/Pd)N magnetic multilayers are analyzed as candidates for patterned recording layers. Following patterning, optimized multilayers are shown to exhibit coercivity values well in excess of 14kOe. It is found that the magnetization reversal in patterned bits takes place via domain wall nucleation and propagation. The nucleation field and the location of the nucleation site strongly depend on the bit edge imperfections and contribute to finite switching field distribution. Playback off a bit-patterned media using various magnetic reader designs is analyzed using reciprocity theory.
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