{"title":"具有电池间隧道欧姆连接的双端单片InP/InGaAsP串联太阳能电池","authors":"C.C. Shen, P. Chang, K. A. Emory","doi":"10.1109/ICIPRM.1991.147288","DOIUrl":null,"url":null,"abstract":"The structure, epitaxial growth, and fabrication of a InP-based two-terminal monolithic tandem solar cell are described. The tandem solar cell consists of a p/n InP upper cell and a 0.95 eV p/n InGaAsP lower cell. A InGaAsP tunnel junction acts as the intercell ohmic contacts for the series connection of the two subcells. Evaluation results showing conversion efficiency as high as 14.8% obtained under 1 sun global AM 1.5 conditions are presented.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"32 1","pages":"36-39"},"PeriodicalIF":0.0000,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Two-terminal monolithic InP/InGaAsP tandem solar cells with tunneling intercell ohmic connections\",\"authors\":\"C.C. Shen, P. Chang, K. A. Emory\",\"doi\":\"10.1109/ICIPRM.1991.147288\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The structure, epitaxial growth, and fabrication of a InP-based two-terminal monolithic tandem solar cell are described. The tandem solar cell consists of a p/n InP upper cell and a 0.95 eV p/n InGaAsP lower cell. A InGaAsP tunnel junction acts as the intercell ohmic contacts for the series connection of the two subcells. Evaluation results showing conversion efficiency as high as 14.8% obtained under 1 sun global AM 1.5 conditions are presented.<<ETX>>\",\"PeriodicalId\":6444,\"journal\":{\"name\":\"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials\",\"volume\":\"32 1\",\"pages\":\"36-39\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1991-04-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1991.147288\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1991.147288","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
摘要
介绍了一种基于inp的双端单片串联太阳能电池的结构、外延生长和制造方法。串联太阳能电池由p/n InP上电池和0.95 eV p/n InGaAsP下电池组成。InGaAsP隧道结作为两个子单元串联连接的单元间欧姆接触。评价结果表明，在1个太阳全球AM 1.5条件下，转换效率高达14.8%。
Two-terminal monolithic InP/InGaAsP tandem solar cells with tunneling intercell ohmic connections
The structure, epitaxial growth, and fabrication of a InP-based two-terminal monolithic tandem solar cell are described. The tandem solar cell consists of a p/n InP upper cell and a 0.95 eV p/n InGaAsP lower cell. A InGaAsP tunnel junction acts as the intercell ohmic contacts for the series connection of the two subcells. Evaluation results showing conversion efficiency as high as 14.8% obtained under 1 sun global AM 1.5 conditions are presented.<>
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