从微米到纳米:IRDS和AMC控制

C. Muller, Henry Yu, D. Lu
{"title":"从微米到纳米:IRDS和AMC控制","authors":"C. Muller, Henry Yu, D. Lu","doi":"10.1109/CSTIC49141.2020.9282458","DOIUrl":null,"url":null,"abstract":"The Yield Enhancement Chapter of the International Roadmap for Devices and Systems (IRDS), and more specifically, the focus topics of Wafer Environment Contaminant Control and Surface Environment Contaminant Control, are responsible for identifying airborne molecular contamination (AMC) and setting guideline limits in all areas of semiconductor processing. Today AMC control is required in FEOL and BEOL operations and this control may be achieved fab-wide or at certain critical processes, potentially also at different levels for different processes.","PeriodicalId":6848,"journal":{"name":"2020 China Semiconductor Technology International Conference (CSTIC)","volume":"220 1","pages":"1-4"},"PeriodicalIF":0.0000,"publicationDate":"2020-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"From Microns to Nanometers: The IRDS and AMC Control\",\"authors\":\"C. Muller, Henry Yu, D. Lu\",\"doi\":\"10.1109/CSTIC49141.2020.9282458\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The Yield Enhancement Chapter of the International Roadmap for Devices and Systems (IRDS), and more specifically, the focus topics of Wafer Environment Contaminant Control and Surface Environment Contaminant Control, are responsible for identifying airborne molecular contamination (AMC) and setting guideline limits in all areas of semiconductor processing. Today AMC control is required in FEOL and BEOL operations and this control may be achieved fab-wide or at certain critical processes, potentially also at different levels for different processes.\",\"PeriodicalId\":6848,\"journal\":{\"name\":\"2020 China Semiconductor Technology International Conference (CSTIC)\",\"volume\":\"220 1\",\"pages\":\"1-4\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-06-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 China Semiconductor Technology International Conference (CSTIC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CSTIC49141.2020.9282458\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 China Semiconductor Technology International Conference (CSTIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSTIC49141.2020.9282458","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

器件和系统国际路线图(IRDS)的产量增强章节,更具体地说,是晶圆环境污染物控制和表面环境污染物控制的重点主题,负责识别空气中的分子污染(AMC),并在半导体加工的所有领域设定指导限值。今天,在FEOL和BEOL操作中需要AMC控制,这种控制可以在整个晶圆厂范围内或某些关键过程中实现,也可能在不同的过程中达到不同的水平。
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From Microns to Nanometers: The IRDS and AMC Control
The Yield Enhancement Chapter of the International Roadmap for Devices and Systems (IRDS), and more specifically, the focus topics of Wafer Environment Contaminant Control and Surface Environment Contaminant Control, are responsible for identifying airborne molecular contamination (AMC) and setting guideline limits in all areas of semiconductor processing. Today AMC control is required in FEOL and BEOL operations and this control may be achieved fab-wide or at certain critical processes, potentially also at different levels for different processes.
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