{"title":"基于第一性原理计算的砷化镓薄膜中对称断裂引起的带分裂","authors":"M. C. Escaño, H. Kasai, M. Tani","doi":"10.3131/JVSJ2.60.445","DOIUrl":null,"url":null,"abstract":"*1Department of Applied Physics, University of Fukui, 3–9–1 Bunkyo, Fukui-shi, Fukui 910–8507, Japan *2National Institute of Technology, Akashi College, 679–3 Nishioka, Uozumi-cho, Akashi-shi, Hyogo 674–8501, Japan *3Graduate School of Engineering, Osaka University, 1–1 Yamadaoka, Suita-shi, Osaka 565–0871, Japan *4Research Center for Development of Far-Infrared Region, University of Fukui, 3–9–1 Bunkyo, Fukui-shi, Fukui 910–8507, Japan","PeriodicalId":17344,"journal":{"name":"Journal of The Vacuum Society of Japan","volume":"320 1","pages":"445-449"},"PeriodicalIF":0.0000,"publicationDate":"2017-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Symmetry Breaking-induced Band-splitting in GaAs Thin Film by First-principles Calculations\",\"authors\":\"M. C. Escaño, H. Kasai, M. Tani\",\"doi\":\"10.3131/JVSJ2.60.445\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"*1Department of Applied Physics, University of Fukui, 3–9–1 Bunkyo, Fukui-shi, Fukui 910–8507, Japan *2National Institute of Technology, Akashi College, 679–3 Nishioka, Uozumi-cho, Akashi-shi, Hyogo 674–8501, Japan *3Graduate School of Engineering, Osaka University, 1–1 Yamadaoka, Suita-shi, Osaka 565–0871, Japan *4Research Center for Development of Far-Infrared Region, University of Fukui, 3–9–1 Bunkyo, Fukui-shi, Fukui 910–8507, Japan\",\"PeriodicalId\":17344,\"journal\":{\"name\":\"Journal of The Vacuum Society of Japan\",\"volume\":\"320 1\",\"pages\":\"445-449\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of The Vacuum Society of Japan\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.3131/JVSJ2.60.445\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of The Vacuum Society of Japan","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.3131/JVSJ2.60.445","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Symmetry Breaking-induced Band-splitting in GaAs Thin Film by First-principles Calculations
*1Department of Applied Physics, University of Fukui, 3–9–1 Bunkyo, Fukui-shi, Fukui 910–8507, Japan *2National Institute of Technology, Akashi College, 679–3 Nishioka, Uozumi-cho, Akashi-shi, Hyogo 674–8501, Japan *3Graduate School of Engineering, Osaka University, 1–1 Yamadaoka, Suita-shi, Osaka 565–0871, Japan *4Research Center for Development of Far-Infrared Region, University of Fukui, 3–9–1 Bunkyo, Fukui-shi, Fukui 910–8507, Japan
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