臭氧预沉积处理对GaSb MOS电容器的影响

2013 Spanish Conference on Electron Devices Pub Date : 2013-03-21 DOI:10.1109/CDE.2013.6481332

Z. Tan, Lianfeng Zhao, Ning Cui, Jing Wang, Jun Xu

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引用次数: 2

摘要

研究了不同温度下臭氧预沉积处理的GaSb金属氧化物半导体电容器(MOSCAPs)。发现臭氧处理可以改善高k/GaSb MOSCAPs的性能。经过200°C臭氧预沉积处理后，界面陷阱密度(Dit)降低了50%，100°C臭氧处理后，栅极泄漏电流降低了约70%。

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Effects of Ozone pre-deposition treatment on GaSb MOS capacitors

GaSb metal-oxide-semiconductor capacitors (MOSCAPs) with Ozone pre-deposition treatment at various temperatures are studied. It is found that Ozone treatment can improve the characteristics of High-k/GaSb MOSCAPs. The Interface Trap Density (Dit) is reduced by 50% after Ozone pre-deposition treatment at 200°C, and gate leakage current is reduced by around 70% after Ozone treatment at 100°C.

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2013 Spanish Conference on Electron Devices

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