{"title":"一个0.7W完全集成的42GHz功率放大器，在0.13µm SiGe BiCMOS中具有10%的PAE","authors":"Wei Tai, L. Carley, D. Ricketts","doi":"10.1109/ISSCC.2013.6487673","DOIUrl":null,"url":null,"abstract":"In this paper, we report a fully integrated power amplifier (PA) architecture that combines the power of 16 on-chip PAs using a 16-way zero-degree combiner to achieve an output power of 0.7W with a power-added efficiency (PAE) of 10% at 42GHz and a -3dB bandwidth of 9GHz. This is 2.6 times more output power than a recently reported millimeter-Wave (mm-Wave) silicon-based PA [1]. The circuit is a fully integrated mm-Wave PA achieving a leading output power approaching 1 Watt in a silicon process.","PeriodicalId":6378,"journal":{"name":"2013 IEEE International Solid-State Circuits Conference Digest of Technical Papers","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2013-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"53","resultStr":"{\"title\":\"A 0.7W fully integrated 42GHz power amplifier with 10% PAE in 0.13µm SiGe BiCMOS\",\"authors\":\"Wei Tai, L. Carley, D. Ricketts\",\"doi\":\"10.1109/ISSCC.2013.6487673\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we report a fully integrated power amplifier (PA) architecture that combines the power of 16 on-chip PAs using a 16-way zero-degree combiner to achieve an output power of 0.7W with a power-added efficiency (PAE) of 10% at 42GHz and a -3dB bandwidth of 9GHz. This is 2.6 times more output power than a recently reported millimeter-Wave (mm-Wave) silicon-based PA [1]. The circuit is a fully integrated mm-Wave PA achieving a leading output power approaching 1 Watt in a silicon process.\",\"PeriodicalId\":6378,\"journal\":{\"name\":\"2013 IEEE International Solid-State Circuits Conference Digest of Technical Papers\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-03-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"53\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE International Solid-State Circuits Conference Digest of Technical Papers\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISSCC.2013.6487673\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE International Solid-State Circuits Conference Digest of Technical Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSCC.2013.6487673","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 0.7W fully integrated 42GHz power amplifier with 10% PAE in 0.13µm SiGe BiCMOS
In this paper, we report a fully integrated power amplifier (PA) architecture that combines the power of 16 on-chip PAs using a 16-way zero-degree combiner to achieve an output power of 0.7W with a power-added efficiency (PAE) of 10% at 42GHz and a -3dB bandwidth of 9GHz. This is 2.6 times more output power than a recently reported millimeter-Wave (mm-Wave) silicon-based PA [1]. The circuit is a fully integrated mm-Wave PA achieving a leading output power approaching 1 Watt in a silicon process.
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