继续缩小:新一代光刻技术-进展与前景

M. V. D. Brink
{"title":"继续缩小:新一代光刻技术-进展与前景","authors":"M. V. D. Brink","doi":"10.1109/ISSCC.2013.6487620","DOIUrl":null,"url":null,"abstract":"Chip makers are increasingly concerned about the shrink and cost. This concern drives different lithography solutions for different products. Two major trends can be observed: aggressive adoption of EUV, or aggressive extension of immersion. Further cost reduction could be achieved by introducing 450mm wafers.","PeriodicalId":6378,"journal":{"name":"2013 IEEE International Solid-State Circuits Conference Digest of Technical Papers","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2013-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"Continuing to shrink: Next-generation lithography - Progress and prospects\",\"authors\":\"M. V. D. Brink\",\"doi\":\"10.1109/ISSCC.2013.6487620\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Chip makers are increasingly concerned about the shrink and cost. This concern drives different lithography solutions for different products. Two major trends can be observed: aggressive adoption of EUV, or aggressive extension of immersion. Further cost reduction could be achieved by introducing 450mm wafers.\",\"PeriodicalId\":6378,\"journal\":{\"name\":\"2013 IEEE International Solid-State Circuits Conference Digest of Technical Papers\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-03-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE International Solid-State Circuits Conference Digest of Technical Papers\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISSCC.2013.6487620\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE International Solid-State Circuits Conference Digest of Technical Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSCC.2013.6487620","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7

摘要

芯片制造商越来越担心芯片的缩水和成本。这种担忧促使不同产品采用不同的光刻解决方案。可以观察到两个主要趋势:积极采用EUV,或积极扩展沉浸感。进一步降低成本可以通过引入450mm晶圆实现。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Continuing to shrink: Next-generation lithography - Progress and prospects
Chip makers are increasingly concerned about the shrink and cost. This concern drives different lithography solutions for different products. Two major trends can be observed: aggressive adoption of EUV, or aggressive extension of immersion. Further cost reduction could be achieved by introducing 450mm wafers.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
A CMOS dual-switching power-supply modulator with 8% efficiency improvement for 20MHz LTE Envelope Tracking RF power amplifiers A 3.4pJ FeRAM-enabled D flip-flop in 0.13µm CMOS for nonvolatile processing in digital systems Razor-lite: A side-channel error-detection register for timing-margin recovery in 45nm SOI CMOS Self-super-cutoff power gating with state retention on a 0.3V 0.29fJ/cycle/gate 32b RISC core in 0.13µm CMOS A fully intraocular 0.0169mm2/pixel 512-channel self-calibrating epiretinal prosthesis in 65nm CMOS
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1