先进半导体器件结制程技术的前景与挑战

2014 20th International Conference on Ion Implantation Technology (IIT) Pub Date : 2014-10-30 DOI:10.1109/IIT.2014.6939767

K. Suguro

{"title":"先进半导体器件结制程技术的前景与挑战","authors":"K. Suguro","doi":"10.1109/IIT.2014.6939767","DOIUrl":null,"url":null,"abstract":"Historical background of ion implantation technology in semiconductor devices is reviewed in conjunction with electrical activation of impurity atoms, annealing of primary defects introduced during ion implantation as well as the diffusion of impurity atoms. Next the prospects and challenges in junction process technology for advanced semiconductor devices are discussed.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"22 1","pages":"1-3"},"PeriodicalIF":0.0000,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"The prospects and challenges in junction process technology for advanced semiconductor devices\",\"authors\":\"K. Suguro\",\"doi\":\"10.1109/IIT.2014.6939767\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Historical background of ion implantation technology in semiconductor devices is reviewed in conjunction with electrical activation of impurity atoms, annealing of primary defects introduced during ion implantation as well as the diffusion of impurity atoms. Next the prospects and challenges in junction process technology for advanced semiconductor devices are discussed.\",\"PeriodicalId\":6548,\"journal\":{\"name\":\"2014 20th International Conference on Ion Implantation Technology (IIT)\",\"volume\":\"22 1\",\"pages\":\"1-3\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-10-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 20th International Conference on Ion Implantation Technology (IIT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IIT.2014.6939767\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 20th International Conference on Ion Implantation Technology (IIT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IIT.2014.6939767","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

综述了半导体器件中离子注入技术的历史背景，包括杂质原子的电活化、离子注入过程中引入的初级缺陷的退火以及杂质原子的扩散。展望了先进半导体器件结制工艺的发展前景和面临的挑战。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

The prospects and challenges in junction process technology for advanced semiconductor devices

Historical background of ion implantation technology in semiconductor devices is reviewed in conjunction with electrical activation of impurity atoms, annealing of primary defects introduced during ion implantation as well as the diffusion of impurity atoms. Next the prospects and challenges in junction process technology for advanced semiconductor devices are discussed.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2014 20th International Conference on Ion Implantation Technology (IIT)

自引率

0.00%

发文量

期刊最新文献

Increase of sp3 content in a-C films with gas cluster ion beam bombardments; XPS and NEXAFS study NMOS source-drain extension ion implantation into heated substrates Activation of low-dose Si+ implant into In0.53Ga0.47As with Al+ and P+ co-implants The features of cold boron implantation in silicon Plasma Doping optimizing knock-on effect